Blick ins Buch

Field-effect Self-mixing Terahertz Detectors

Jiandong Sun (Autor)

Buch | Hardcover

XVIII, 126 Seiten

2016 | 1st ed. 2016
Springer Berlin (Verlag)
978-3-662-48679-5 (ISBN)

Lese- und Medienproben

Inhaltsverzeichnis (PDF)
Blick ins Buch (midvox)

Artikel merken

A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.

Jiandong Sun's research focuses on exploring terahertz detectors and sources based on low-dimensional plasma wave. In his Ph. D thesis, he developed high-sensitivity terahertz detectors based on the self-mixing effect in gate-controlled two-dimensional electron systems at room temperature. Terahertz antennas and Schottky gates are integrated with the two-dimensional electron gas for manipulating both the localized terahertz field and the field-effect electron channel. The underlying self-mixing properties are uncovered through the transport measurement and simulations. The device model and the characterization techniques he developed in the thesis could be applied for further detector optimization for future real applications. honors: 1) American Superconductor Corp (AMSC) Award (2012). 2) Nominated by Chinese Academy of Sciences for an outstanding Ph.D. thesis (2013) 3) Honor roll student of Chinese Academy of Sciences (2010) 4) Honor roll student of Chinese Academy of Sciences (2011) Publications: [1] J. D. Sun, Y. F. Sun, D. M. Wu, Y. Cai, H. Qin and B. S. Zhang. Highresponsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor, Appl. Phys. Lett. 100, 013506 (2012). [2] J. D. Sun, H. Qin, R. A. Lewis, Y. F. Sun, X. Y. Zhang, Y. Cai, D. M. Wu, and B. S. Zhang. Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor, Appl. Phys. Lett. 100, 173513 (2012). [3] Y. F. Sun, J. D. Sun, Y. Zhou, R. B. Tan, C. H. Zeng, W. Xue, H. Qin, B. S. Zhang, and D. M. Wu. Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas, Appl. Phys. Lett. 98, 252103 (2011). [4] J. D. Sun, Y. F. Sun, Y. Zhou, Z. P. Zhang, W. K. Lin, C. H. Zen, D. M. Wu, B. S. Zhang, H.Qin. A Terahertz detector Based on GaN/AlGaN High Electron Mobility Transistor with Bowtie, AIP Conf. Proc , 1399, 893 (2011); 30th International Conference on the Physics of Semiconductors (ICPS) 2010 [5] R. B. Tan, H. Qin, J. D. Sun, X. Y. Zhang, and B. S. Zhang. Modeling an antenna-coupled graphene field-effect terahertz detector. Appl. Phys. Lett. 103, 173507 (2013)

Introduction.- Field-Effect Self-Mixing Mechanism and Detector Model.- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT.- Realization of Resonant Plasmon Excitation and Detection.- Scanning Near-Field Probe for Antenna Characterization.- Applications.- Conclusions and Outlook.

Erscheinungsdatum	08.10.2016
Reihe/Serie	Springer Theses
Zusatzinfo	XVIII, 126 p. 84 illus., 4 illus. in color.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Naturwissenschaften ► Physik / Astronomie ► Optik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Engineering • Finite-Difference Time-Domain (FDTD) • GaN/AlGaN Heterostructure • High-Electron-Mobility Transistor (HEMT) • Microwaves, RF and Optical Engineering • Optics, Optoelectronics, Plasmonics and Optical De • Self-Mixing • semiconductors • Solid state physics • Terahertz antenna • terahertz detector • THz Near-Field Optics • Two-Dimensional Electron System (2DES) • Two-Dimensional Plasma Wave
ISBN-10	3-662-48679-2 / 3662486792
ISBN-13	978-3-662-48679-5 / 9783662486795
Zustand	Neuware