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Reliability studies of GaN High Electron Mobility Transistors

Markus Cäsar (Autor)

Oliver Ambacher (Herausgeber)

Buch | Softcover

172 Seiten

2015
Fraunhofer Verlag
978-3-8396-0897-5 (ISBN)

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Most of our modern lifestyle is based on an ever expanding communication technology marked by higher frequencies and bandwidth. Nowadays used devices reach material limits and GaN possess intrinsic advantages to replace current technology. To serve as a considerable alternative, the reliability of GaN devices is a key factor. This thesis addresses the main physical degradation processes of state-of-the-art devices. The main problems of GaN are twofold: Due to the device realisation and operating conditions, large electric fields are appearing leading to a unique degradation pattern. Previous given explanation fails, and a new approach to overcome this problem could be shown in this work, alongside with solutions for field mitigation.

Erscheint lt. Verlag	29.6.2015
Reihe/Serie	Science for Systems ; 22
Zusatzinfo	num., mostly col. illus. and tab.
Verlagsort	Stuttgart
Sprache	englisch
Maße	148 x 210 mm
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Nachrichtentechnik
Schlagworte	Angewandte Forschung • applied research • Fraunhofer IAF
ISBN-10	3-8396-0897-X / 383960897X
ISBN-13	978-3-8396-0897-5 / 9783839608975
Zustand	Neuware