Dispersion Relations in Heavily-Doped Nanostructures

Kamakhya Prasad Ghatak (Autor)

Buch | Hardcover

LV, 625 Seiten

2015 | 1st ed. 2016
Springer International Publishing (Verlag)
978-3-319-20999-9 (ISBN)

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This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Professor K. P. Ghatak is the First Recipient of the Degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955 and in the same year he received the prestigious Indian National Science Academy award. He joined as Lecturer in the Institute of Radio Physics and Electronics of the University of Calcutta in 1983, Reader in the Department of Electronics and Telecommunication of Jadavpur University in 1987 and Professor in the Department of Electronic Science of the University of Calcutta in 1994 respectively. His present research interest is nanostructured science and technology. He is the principal co-author of more than 200 research papers on Semiconductor and Nanoscience in eminent peer-reviewed International Journals and more than 50 research papers in the Proceedings of the International Conferences held in USA and many of his papers are being cited many times. Professor Ghatak is the invited Speaker of SPIE, MRS, etc. and is the referee of different eminent Journals.

From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors.- The DR in doping superlattices of HD Non-Parabolic Semiconductors.- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.

Erscheint lt. Verlag	23.11.2015
Reihe/Serie	Springer Tracts in Modern Physics
Zusatzinfo	LV, 625 p.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Schlagworte	2d Quantized Structures • Dispersion Relations • Inversion Layers of Non-Parabolic Semiconductors • Low-Dimensional Heavily-Doped Semiconductors • Magneto-size Quantization • non-parabolic Semiconductors • Photo-excitation in Semiconductors • quantized optoelectronic semiconductors • Quantum Wells and Nanowires • Superlattices of Semiconductors
ISBN-10	3-319-20999-X / 331920999X
ISBN-13	978-3-319-20999-9 / 9783319209999
Zustand	Neuware