Porous Silicon: From Formation to Application: Formation and Properties, Volume One
Crc Press Inc (Verlag)
978-1-4822-6454-8 (ISBN)
With contributions from an international team of well-known experts, this book presents the most recent progress in the field of porous silicon. Focused chapters cover the fundamentals of silicon porosification, the qualities of porous silicon, including its electrical, luminescent, optical, and thermal properties, and the processing of porous silicon for use in the technology of other fields. It also gives valuable insights on what can be expected from the field in the near future.
The book includes extensive references to recently published literature on the subject, allowing for deeper exploration of information on the porosification process, designing porous silicon-based technology, and improving performance of devices fabricated using porous silicon. It is an indispensable addition to the library of any scientist or technician involved or interested in the research, development, and application of porous silicon.
Dr. Ghenadii Korotcenkov is a research professor in the School of Material Science and Engineering at Gwangju Institute of Science and Technology in Korea. He earned his PhD in physics and technology of semiconductor materials and devices from the Technical University of Moldova, and his Dr. Sci. degree in the physics of semiconductors and dielectrics from the Academy of Science in Moldova. He has more than 40 years of experience as a teacher and scientific researcher, and has been involved with numerous national and international scientific and engineering projects. He is the author or editor of 29 books and special issues, holds 18 patents, has published more than 200 peer-reviewed articles, has presented more than 200 reports at national and international conferences, and has received several awards and honors.
INTRODUCTION. Porous Silicon Characterization and Application: General View. SILICON POROSIFICATION. Fundamentals of Silicon Porosification via Electrochemical Etching. Technology of Si Porous Layer Fabrication Using Anodic Etching: General Scientific and Technical Issues. Silicon Porosification: Approaches to PSi Parameters Control. PROPERTIES AND PROCESSING. Methods of Porous Silicon Parameters Control. Structural and Electrophysical Properties of Porous Silicon. Luminescent Properties of Porous Silicon. Optical Properties of Porous Silicon. Thermal Properties of Porous Silicon. Alternative Methods of Silicon Porosification and Properties of These PSi Layers. The Mechanism of Metal-Assisted Etching of Silicon. Porous Silicon Processing. Surface Chemistry of Porous Silicon. Contacts to Porous Silicon and PSi-Based p–n Homo- and Heterojunctions.
| Zusatzinfo | 29 Tables, black and white; 296 Illustrations, black and white |
|---|---|
| Verlagsort | Bosa Roca |
| Sprache | englisch |
| Maße | 210 x 280 mm |
| Gewicht | 1406 g |
| Themenwelt | Naturwissenschaften ► Chemie ► Technische Chemie |
| Naturwissenschaften ► Physik / Astronomie ► Optik | |
| Technik ► Maschinenbau | |
| ISBN-10 | 1-4822-6454-4 / 1482264544 |
| ISBN-13 | 978-1-4822-6454-8 / 9781482264548 |
| Zustand | Neuware |
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