Physics of SiO2 and Its Interfaces (eBook)

Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24, 1978

Sokrates T. Pantelides (Herausgeber)

eBook Download: PDF

2013 | 1. Auflage
500 Seiten
Elsevier Science (Verlag)
978-1-4831-3900-5 (ISBN)

Infos

The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Inhalt

Front Cover 1
The Physics of SiO2 and its Interfaces 4
Copyright Page 5
Table of Contents 8
FOREWORD 6
CHAPTER I: TRANSPORT PROPERTIES AND TUNNELING 14
CHAPTER 
14 
ABSTRACT 14
1. MOBILITY EDGES AND POLARONS 14
2. DEEP STATES IN THE GAP 17
3. EXCITONS 20
REFERENCES 25
CHAPTER 2. SMALL POLARON FORMATION 
27 
ABSTRACT 27
REFERENCES 30
CHAPTER 3. 
32 
ABSTRACT 32
INTRODUCTION 32
SAMPLES AND EXPERIMENTAL TECHNIQUES 33
RESULTS 33
DISCUSSION 36
REFERENCES 36
CHAPTER 4. EXCITON TRANSPORT IN SiO2 37
ABSTRACT 37
INTRODUCTION 37
EXPERIMENTAL RESULTS 38
DISCUSSION 40
ACKNOWLEDGMENT 41
REFERENCES 41
CHAPTER 5. HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO2 42
ABSTRACT 42
INTRODUCTION 42
VELOCITY-FIELD RELATIONSHIP 43
VELOCITY RUNAWAY 43
AVALANCHE BREAKDOWN 45
DISCUSSION 46
REFERENCES 46
CHAPTER 6. 
48 
ABSTRACT 48
INTRODUCTION 48
SAMPLE PREPARATION 49
MEASUREMENT TECHNIQUE 49
RESULTS 49
DISCUSSION 50
CONCLUSION 51
ACKNOWLEDGEMENTS 52
REFERENCES 52
CHAPTER 7. 
53 
References 58
CHAPTER 8. 
59 
ACKNOWLEDGMENT 63
REFERENCES 63
CHAPTER 9. 
64 
ABSTRACT 64
REFERENCES 67
CHAPTER II: ELECTRONIC STRUCTURE AND SPECTRA 68
CHAPTER 10. 
68 
REFERENCES 72
CHAPTER 11. ELECTRONIC STRUCTURE OF a-QUARTZ AND THE INFLUENCE OF SOME 
73 
ABSTRACT 73
REFERENCES 77
CHAPTER 12. ELECTRONIC STRUCTURE INVESTIGATIONS OF TWO ALLOTROPIC FORMS OF SiO2: a-QUARTZ AND ß-CRISTOBALITE 78
ABSTRACT 78
INTRODUCTION 78
Band Structure 79
Total and Orbital Densities of States 79
REFERENCES 82
CHAPTER 13. 
83 
ABSTRACT 83
INTRODUCTION 83
TIGHT-BINDING FIT TO CONDUCTION BANDS 84
TIGHT-BINDING BANDS OF IDEALIZED TRIDYMITE 85
SUMMARY AND CONCLUSIONS 86
ACKNOWLEDGMENT 87
REFERENCES 87
CHAPTER 14. 
88 
INTRODUCTION 88
RESULTS 88
DISCUSSION 90
REFERENCES 92
CHAPTER 
93 
ABSTRACT 93
INTRODUCTION 93
BAND-THEORETIC APPROACH AND THE EFFECT OF E-H INTERACTIONS 94
BOND-ORBITAL APPROACH 96
REFERENCES 97
CHAPTER 
98 
ABSTRACT 98
REFERENCES 101
CHAPTER 17. 
102 
ABSTRACT 102
INTRODUCTION 102
EXPERIMENTAL TECHNIQUE 102
RESULTS AND DISCUSSION 103
REFERENCES 106
CHAPTER 18. THE ABSORPTION AND PHOTOCONDUCTIVITY SPECTRA OF VITREOUS SiO2 107
INTRODUCTION 107
RESULTS 107
INTERPRETATION 108
REFERENCES 111
CHAPTER 19. 
112 
ABSTRACT 112
INTRODUCTION 112
CALCULATION OF THE AUGER TRANSITIONS 112
EXPERIMENTAL MEASUREMENTS 115
RESULTS AND DISCUSSION 115
REFERENCES 117
CHAPTER 20. IS SILICON DIOXIDE COVALENT OR IONIC? 118
ABSTRACT 118
INTRODUCTION 118
THE ELECTRONIC STRUCTURE 120
THE CONSEQUENCES 121
REFERENCES 122
CHAPTER 21. CHEMICAL BOND AND RELATED PROPERTIES OF 
124 
INTRODUCTION 124
CHEMICAL BOND 124
IONIZATION ENERGIES AND EFFECTIVE ATOMIC CHARGES 125
REFRACTIVE INDICES AND THEIR PRESSURE AND TEMPERATURE DEPENDENCE 125
EMPIRICAL PSEUDOPOTENTIAL MODEL 126
STRUCTURE OF AMORPHOUS 
126 
CHEMICAL DISORDER IN SiOx 127
REFERENCES 128
CHAPTER 22. 
129 
ABSTRACT 129
INTRODUCTION 129
CONCLUSION 133
REFERENCES 134
CHAPTER III: THERMAL AND STRUCTURAL PROPERTIES 135
CHAPTER 23. 
135 
ABSTRACT 135
INTRODUCTION 135
RESULTS AND DISCUSSION 136
REFERENCES 139
CHAPTER 24. THERMAL CONDUCTIVITY OF SiO2 141
ABSTRACT 141
INTRODUCTION 141
APPLICATION TO SiO2 143
REFERENCES 145
CHAPTER 25. 
146 
ABSTRACT 146
INTRODUCTION 146
OUTLINE THEORY 147
EXPERIMENTAL TECHNIQUE 147
DISCUSSION 149
CONCLUSION 151
REFERENCES 151
CHAPTER 26. 
152 
ABSTRACT 152
INTRODUCTION 152
HYPOTHETICAL MODEL OF GLASS-FORMING PROCESSES IN 
153 
EXPERIMENTAL PROCEDURE 153
RESULTS 154
DISCUSSION 154
ACKNOWLEDGMENTS 156
REFERENCES 156
CHAPTER 27. 
157 
Abstract 157
Introduction 157
Experimentais 157
Result and Discussion 158
Acknowledgements 161
References 161
CHAPTER 28. CRITICAL NEED FOB S(k,w) DETERMINATION IN AMORPHOUS SiO2: CALCULATION OF PHYSICAL PROPERTIES VIA FROZEN LIQSJID PHONONS 162
ABSTRACT 162
INTRODUCTION 162
EXISTENCE 
163 
SCALING OF FROZW LIQUID PHONOS PROPERTIES IN GLASSES 165
LAW OF CORRESPONDING STATES WITH LIQÏÏIDS AND POWDERS 165
ANALOG 
165 
FERMI GLASS FORMATION AND ANDERSON LOCALIZATION 166
APPLICATION TO a-SiOc. GeO2 
166 
REFERENCES 166
CHAPTER 29. 
168 
ABSTRACT 168
REFERENCES 172
CHAPTER IV: DEFECTS AND IMPURITIES IN THERMAL SiO2 173
CHAPTER 30. THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON 173
ABSTRACT 173
INTRODUCTION 173
PHYSICS OF TRAPPING AND DETRAPPING 174
EXPERIMENTAL TECHNIQUES 181
TRAPS IN SiO2 184
CONCLUSIONS 188
ACKNOWLEDGEMENTS 189
REFERENCES 189
CHAPTER 31. DYNAMIC BEHAVIOUR OF MOBILE IONS IN SiO2 
192 
ABSTRACT 192
INTRODUCTION 192
TSIC MEASUREMENTS 192
TVS MEASUREMENTS 194
CONTAMINATION EXPERIMENTS 195
CONCLUSIONS 195
REFERENCES 196
CHAPTER 32. PHOTO-INJECTION STUDIES OF TRAPS IN Hcl/H20 
197 
INTRODUCTION 197
EXPERIMENT 197
KINETICS OF TRAPPING 198
RESULTS 199
DISCUSSION OF RESULTS 199
ACKNOWLEDGEMENTS 201
REFERENCES 201
CHAPTER 33. PHOTODEPOPULATION OF ELECTRONS TRAPPED IN Si02 ON SITES RELATED TO AS AND P IMPLANTATION 202
ABSTRACT 202
INTRODUCTION 202
EXPERIMENTAL 203
PHOTODETRAPPING ANALYSIS 203
RESULTS 205
DISCUSSION 206
ACKNOWLEDGEMENTS 206
REFERENCES 207
CHAPTER 34. CHEMICAL STATE OF PHOSPHORUS IN DEPOSITED SiO2 (P) FILMS 208
CHAPTER 35. SPECTROSCOPIC AND STRUCTURAL PROPERTIES OF NITROGEN DOPED LOW-TEMPERATURE SiO2 FILMS 213
ABSTRACT 213
INTRODUCTION 213
INSULATOR GROWTH 214
RESULTS AND DISCUSSION 215
ACKNOWLEDGEMENTS 216
REFERENCES 216
CHAPTER 36. SOME OBSERVATIONS OF DEFECTS IN AMORPHOUS SiO2 FILMS 218
INTRODUCTION 218
RESULTS AND DISCUSSION 218
CONCLUSIONS 221
ACKNOWLEDGEMENT 221
REFERENCES 222
CHAPTER 37. MEASUREMENT OF HYDROGEN PROFILES IN SiO2 BY A NUCLEAR REACTION TECHNIQUE. 223
ABSTRACT 223
INTRODUCTION 223
TECHNIQUE 224
RESULTS AND ANALYSIS 224
DISCUSSION 225
CHAPTER 38. 
228 
ABSTRACT 228
INTRODUCTION 228
SOLUBILITY 228
SPECTROSCOPY OF MOLECULAR HYDROGEN IN VITREOUS SILICA 229
MODELING 230
FREQUENCY SHIFT CALCULATIONS 232
ACKNOWLEGEMENTS 233
REFERENCES 234
CHAPTER 39. 
235 
INTRODUCTION 235
INDIRECT EVIDENCE OF HYDROGEN 235
DIRECT EVIDENCE OF HYDROGEN 235
Infrared Spectroscopic Evidence of SiH and OH Groups 236
EFFECTS OF HYDROGEN ON THE Si/SiO2 INTERFACE 238
REFERENCES 238
CHAPTER 40. ESR 
240 
ABSTRACT 240
INTRODUCTION 240
EXPERIMENTAL DETAILS 240
RESULTS AND DISCUSSION 241
REFERENCES 244
CHAPTER V: DEFECTS AND IMPURITIES IN a-QUARTZ AND FUSED SILICA 245
CHAPTER 41. DEFECTS AND IMPURITIES IN 
245 
INTRODUCTION 245
CRYSTALLOGRAPHY OF 
246 
INTERPRETATION OF THE ESR SPECTRA 246
IMPURITY CENTERS IN a-QUARTZ 247
DEFECT CENTERS IN QUARTZ 252
IMPURITY CENTERS IN FUSED SILICA 254
DEFECT CENTERS IN FUSED SILICA 257
CORRELATION OF ESR AND OPTICAL RESULTS 259
ACKNOWLEDGMENT 261
REFERENCES 261
CHAPTER 42. A GERMANIUM TRI-HYDROGEN CENTER IN 
266 
ABSTRACT 266
INTRODUCTION 266
EXPERIMENTAL 266
RESULTS AND ANALYSIS 267
DISCUSSION 267
ACKNOWLEDGEMENTS 268
REFERENCES 270
CHAPTER 43. ELECTRON PARAMAGNETIC RESONANCE STUDIES ON Ai CENTERS IN VITREOUS SILICA 271
ABSTRACT 271
PAPER 271
ACKNOWLEDGEMENT 275
REFERENCES 275
CHAPTER 44. 
276 
ABSTRACT 276
INTRODUCTION 276
EXPERIMENTAL 277
RESULTS 278
CONCLUSIONS 279
REFERENCES 279
CHAPTER 45. 
281 
ABSTRACT 281
REFERENCES 284
CHAPTER 46. AUGER SPECTRA OF 
286 
ABSTRACT 286
INTRODUCTION 286
THEORETICAL MODEL 287
EXPERIMENTAL EXAMPLE 289
REFERENCES 290
CHAPTER 47. 
291 
ABSTRACT 291
RESULTS AND DISCUSSION 291
REFERENCES 295
CHAPTER 48. 
297 
ABSTRACT 297
INTRODUCTION 297
THERMAL STUDIES 297
DISCUSSION 299
REFERENCES 301
CHAPTER 49. CATHODOLUMINESCENCE STUDIES OF SiO2- Na,Cl,Ge,Cu,Au AND OXYGEN 
302 
ABSTRACT 302
INTRODUCTION 302
METHODS 303
LUMINESCENCE STUDIES 303
CONCLUSIONS 305
ACKNOWLEDGEMENTS 305
REFERENCES 306
CHAPTER 50. ANOMALOUS DIELECTRIC ABSORPTION IN SiO2-EASED GLASSES 307
ABSTRACT 307
INTRODUCTION 307
EXPERIMENTAL 308
RESULTS AND ANALYSIS 308
CONCLUSION 311
REFERENCES 311
CHAPTER 51. 
312 
ABSTRACT 312
INTRODUCTION 312
EXPERIMENTAL AND DISCUSSION 312
REFERENCES 316
CHAPTER 52. 
317 
ABSTRACT 317
INTRODUCTION 317
EXPERIMENTAL DETAILS 317
RESULTS 318
DISCUSSION 320
ACKNOWLEDGEMENT 321
REFERENCES 321
CHAPTER 53. 
322 
REFERENCES 326
CHAPTER 54. 
327 
CHAPTER 55. ION IRRADIATION 
329 
ABSTRACT 329
INTRODUCTION 329
EXPERIMENTAL 330
RESULTS AND DISCUSSION 331
REFERENCES 333
CHAPTER VI: ELECTRONIC STRUCTURE OF THE Si-SiO2 INTERFACE 334
CHAPTER 56. ELECTRONIC STATES OF Si-SiO2 INTERFACES 334
ABSTRACT 334
ACKNOWLEDGEMENTS 340
REFERENCES 340
CHAPTER 57. THE DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN "COMPOUNDS" 341
ABSTRACT 341
INTRODUCTION 341
THE MODEL 341
REFERENCES 345
CHAPTER 58. ELECTRONIC STRUCTURE OF A MODEL Si-SiO2 INTERFACE 346
ABSTRACT 346
INTRODUCTION 346
FULLY-ORDERED INTERFACE MODEL 347
EXTENDED TIGHT-BINDING (ETB) CALCULATIONS 349
LINEAR COMBINATION OF MUFFIN-TIN ORBITALS CALCULATIONS 350
ACKNOWLEDGMENT 351
REFERENCES 351
CHAPTER VII: THE STOICHIOMETRY OF THE Si-SiO2 INTERFACE 352
CHAPTER 59. CONTINUOUS-RANDOM-NETWORK MODELS FOR THE Si-SiO2 INTERFACE 352
ABSTRACT 352
REFERENCES 356
CHAPTER 60. STUDIES OF THE Si-SiO2 INTERFACE BY MeV ION SCATTERING 357
ABSTRACT 357
INTRODUCTION 357
EXPERIMENTAL 358
RESULTS 359
DISCUSSION AND CONCLUSIONS 361
ACKNOWLEDGMENTS 363
REFERENCES 363
CHAPTER 61. TRANSMISSION ELECTRON MICROSCOPY OF MICRO-STRUCTURAL DEFECTS IN Si-SiO2 SYSTEMS: Si CLUSTERS IN SiO2 FILM 364
ABSTRACT 364
INTRODUCTION 364
EXPERIMENTAL PROCEDURES 364
EXPERIMENTAL RESULTS 365
DISCUSSION 367
COMPARISON WITH OTHER EXPERIMENTAL RESULTS 368
CONCLUSION 368
ACKNOWLEDGEMENTS 368
REFERENCE 368
CHAPTER 62. A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY OF THE Si - SiO2 INTERFACE 369
ABSTRACT 369
INTRODUCTION 369
SPECIMEN PREPARATION AND THE EXPERIMENTAL TECHNIQUE 369
IMAGE INTERPRETATION 370
STRUCTURE OF (100), (111) AND (911) INTERFACES 371
LONG-RANGE MODULATION 372
TRANSITION REGION 373
CONCLUSIONS 374
REFERENCES 374
CHAPTER 63. 
375 
ABSTRACT 375
INTRODUCTION 375
MEASUREMENTS 376
FIELD DEPENDENT INTERNAL PHOTOEMISSION 375
DISCUSSION 377
REFERENCES 378
CHAPTER 64. AUGER SPUTTER PROFILING STUDIES OF THE Si-SiO2 INTERFACE 379
ABSTRACT 379
INTRODUCTION 379
EXPERIMENTAL DETAIL 380
LIMITATIONS OF 
381 
RESULTS 381
CONCLUSIONS 384
REFERENCES 385
CHAPTER 65. AUGER ANALYSIS OF THE 
386 
ABSTRACT 386
INTRODUCTION 386
EXPERIMENTAL METHODS 386
AUGER ANALYSIS 387
DISCUSSION 389
CONCLUSIONS 389
ACKNOWLEDGMENT 391
REFERENCES 391
CHAPTER 66. STUDIES OF Si/Si02 INTERFACES AND SiO2 BY XPS 392
ABSTRACT 392
INTRODUCTION 392
EXPERIMENTAL DETAILS 392
THICKNESS DISTRIBUTION IN SILICON OXIDE FILM 393
EXPERIMENTAL RESULTS AND DISCUSSION 394
CONCLUSION 396
REFERENCES 396
CHAPTER 67. X-RAY PHOTOELECTRON SPECTROSCOPY OF SiO2-Si INTERFACIAL REGIONS 397
ABSTRACT 397
INTRODUCTION 397
EXPERIMENTAL 397
RESULTS AND DISCUSSION 398
SUMMARY 401
REFERENCES 401
CHAPTER 68. CHEMICAL STRUCTURE OF THE TRANSITIONAL REGION OF THE SiO2/Si INTERFACE 402
Abstract 402
INTRODUCTION 402
EXPERIMENTAL TECHNIQUES 403
RESULTS AND DISCUSSION 403
RESOLUTION ENHANCEMENT AND CHARGE CORRELATION 406
CONCLUSIONS 408
REFERENCES 408
ACKNOWLEDGMENTS 408
CHAPTER 69. MOS SOLAR CELL AS A TOOL TO STUDY THE TRANSITION REGION ASSOCIATED WITH ULTRA THIN FILMS OF SiOx 409
ABSTRACT 409
INTRODUCTION 409
EFFECT OF OXIDE THICKNESS ON OPEN CIRCUIT VOLTAGE 410
DIELECTRIC PROPERTIES OF THE INTERFACE 412
CONCLUSION 413
REFERENCES 413
CHAPTER VIII: 
414 
CHAPTER 70. INITIAL STAGES OF SiO2 FORMATION ON Si (111) 414
ABSTRACT 414
Introduction 414
Experimental Techniques 415
Oxide 
417 
Si (Ill)-SiO2 Interface Abruptness 418
Summary and Conclusions 418
ACKNOWLEDGMENTS 419
REFERENCES 419
CHAPTER 71. 
420 
INTRODUCTION 420
ELECTRICAL CHARACTERISTICS OF THE ANDERSON TRANSITION 420
INTERFACIAL CHARGE AND LOCALIZATION 421
RADIATION HARDNESS, SLOW STATES AND INTERFACE ENGINEERING 422
ACKNOWLEDGEMENTS 424
REFERENCES 424
CHAPTER 72. METASTABILITIES AT THE Si-SiOx INTERFACE 425
ABSTRACT 425
INTRODUCTION 425
THE MODEL AND RESULTS 425
CONCLUDING REMARKS 428
REFERENCES 429
CHAPTER 73. PHOTOCAPACITANCE PROBING OF Si-SIO2 INTERFACE STATES 430
ABSTRACT 430
INTRODUCTION 430
METHODS 430
RESULTS 432
SUMMARY 433
REFERENCES 433
CHAPTER 74. TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE 434
ABSTRACT 434
INTRODUCTION 434
DLTS MEASUREMENTS ON MOS STRUCTURES 434
THEORY OF CONSTANT-CAPACITANCE DLTS MEASUREMENTS 435
RESULTS AND DISCUSSION 436
ACKNOWLEDGEMENT 440
REFERENCES 440
CHAPTER 75. 
441 
ABSTRACT 441
INTRODUCTION 441
SAMPLES AND EXPERIMENTAL TECHNIQUES 441
EXPERIMENTAL RESULTS 442
DISCUSSION 444
REFERENCES 445
CHAPTER 76. THE INFLUENCE OF THE pH ON THE SURFACE STATE DENSITY AT THE SiO2-Si INTERFACE 446
ABSTRACT 446
INTRODUCTION 446
EXPERIMENTAL 446
RESULTS 447
EFFECT OF VARIATIONS IN THE SURFACE STATE DENSITY ON THE CHANNEL CONDUCTIVITY OF ISFETs 448
CONCLUSION 450
ACKNOWLEDGEMENT 450
REFERENCES 450
CHAPTER 77. 
451 
SUMMARY 455
REFERENCES 455
CHAPTER 
456 
ABSTRACT 456
INTRODUCTION 456
THEORY AND TECHNIQUE 457
RESULTS AND DISCUSSION 458
REFERENCES 461
CHAPTER 78. TEMPERATURE DEPENDENCE OF RELAXATION OF INJECTED CHARGE AT THE POLYCRYSTALLINE-SILICON-SiO2 INTERFACE 462
ABSTRACT 462
INTRODUCTION 462
EXPERIMENTAL AND RESULTS 462
DISCUSSION 464
REFERENCES 466
CHAPTER 79. EFFECTS OF ULTRA-THIN SiOx IN CONDUCTING M-I-S Structures 467
ABSTRACT 467
INTRODUCTION 467
DEVICE CHARACTERISTICS 468
DISCUSSION 469
CHAPTER 80. 
472 
ABSTRACT 472
INTRODUCTION 472
ACKNOWLEDGMENTS 476
REFERENCES 476
CHAPTER 81. ELECTRICAL PROPERTIES OF SiO2-Si INTERFACE FOR DEFORMED Si SURFACES 477
ABSTRACT 477
INTRODUCTION 477
EXPERIMENTAL TECHNIQUES 478
RESULTS AND DISCUSSION 478
REFERENCES 482
CHAPTER 82. SHEAR STRENGTH OF METAL - SiO2 CONTACTS 483
ABSTRACT 483
INTRODUCTION 483
APPARATUS 484
SURFACE CHARACTERIZATION 484
RESULTS AND DISCUSSION 486
REFERENCES 487
List of Participants 488
AUTHOR INDEX 500

Produkt-Details

• Erscheint lt. Verlag: 17.9.2013
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie ► Anorganische Chemie
• Themenwelt: Naturwissenschaften ► Physik / Astronomie
• Themenwelt: Technik
• ISBN-10: 1-4831-3900-X / 148313900X
• ISBN-13: 978-1-4831-3900-5 / 9781483139005