Silicon Carbide - 1968 (eBook)

Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20-23, 1968

H. K. Henisch, R. Roy (Herausgeber)

eBook Download: PDF

2013 | 1. Auflage
378 Seiten
Elsevier Science (Verlag)
978-1-4831-5261-5 (ISBN)

Infos

Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Inhalt

Front Cover 1
Silicon Carbide – 1968 2
Copyright Page 3
Table of Contens 6
OPENING REMARKS 5
CHAPTER 1. PERSPECTIVES ON SILICON CARBIDE 8
Acknowledgements 18
References 18
CHAPTER 2. PROBLEMS IN SILICON CARBIDE DEVICE DEVELOPMENT 20
Introduction 20
Crystal Growth 20
Alpha-Beta Relationship 28
Analysis 28
Materials of Construction 29
References 30
CHAPTER 3. THERMAL PROPERTIES OF ß-SILICON CARBIDE FROM 20 TO 2000°C 32
Introduction 32
Material Preparation 33
Mechanical Measurements 34
Density and Thermal Expansion 35
Enthalpy and Specific Heat 37
Thermal Diffusivity and Thermal Conductivity 37
Acknowledgements 39
References 39
CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONS 40
Introduction 40
Enhancement of growth, and crystal structure 43
Vapour-Liquid-Solid Growth (V.L.S.) 46
Acknowledgements 50
References 50
CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION 52
Introduction 52
Recrystallization Below 2000°C 53
The Influence of Nitrogen and of Ambient Pressures Higher than One Atmosphere 54
The Influence of Aluminium 56
The Influence of IIIB Elements 59
References 61
CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTH 64
Summary 72
Acknowledgments 72
References 72
CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE 74
Acknowledgment 78
References 78
CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION 80
Acknowledgements 90
References 90
CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD 92
Preparation of the SiC Nutrient 92
The Changes in Approach 95
The June 17-19 Sublimation Run 96
The Results of the June 17-19 Sublimation Run 98
Acknowledgments 102
References 102
CHAPTER 10. BETA SILICON CARBIDE 104
Background 104
Experimentai 105
Comparison Properties of Alpha and Beta SiC 108
Discussion 110
Conclusion 112
References 112
CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS 114
Introduction 114
Experimental Procedure 115
Discussion and Conclusions 123
Acknowledgements 124
References 124
CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE 126
Experimental Methods 127
Experimental Results 129
Discussion 132
Conclusions 134
Acknowledgements 135
References 135
CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE 136
Introduction 136
Large Zone Structure 138
Experimental Results 140
Correlation with "Percent h" 144
References 145
CHAPTER 14. OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROOEN-EXCITON COMPLEXES 148
Introduction 148
Absorption Spectrum 148
Exciton Recombination Radiation 151
Conclusions 158
References 158
CHAPTER 15. PHASE STABILITY OF SILICON CARBIDE IN THE TERNARY SYSTEM Si-C-N 160
Introduction 160
Nitride-Bonded Silicon Carbide 162
The Ternary System Si-C-N 163
Abrasive Power of a- and ß-SiC 171
References 172
CHAPTER 16. ELECTRONIC STRUCTURE AND OPTICAL SPECTRUM OF SILICON CARBIDE 174
Introduction 174
Cubic Silicon Carbide 175
2H Silicon Carbide (Wurtzite Structure) 179
Location of Principal and Subsidiary Band Edges in Various SiC Polytypes 181
Acknowledgment 183
References 185
CHAPTER 17. FABRICATION OF SILICON CARBIDE LIGHT EMITTING DIODES 186
Introduction 186
Silicon Carbide Crystal Growing 186
Grinding and Polishing of Crystals 187
Diffusion of Luminescent Layers and p-Layers 188
Properties of Diffused Crystals 189
Fabrication of the Diodes from Diffused Crystals 190
Performance of SiC Diodes 191
Acknowledgements 192
References 192
CHAPTER 18. THE FABRICATION OF SiC ELECTROLUMINESCENT DISMAYS 194
Introduction 194
Solution Growth of p-n Junctions 195
Device Fabrication 197
Blectrical Contacts 200
Device Characteristics 202
Acknowledgements 204
References 204
CHAPTER 19. THE ETCHING OF SILICON CARBIDE 206
Introduction 206
Structure of SiC 207
Mechanical Treatment 207
Chemical Etching 208
Electrolytic Etching 213
Alloy Etching 214
Cathodic Bombardment 214
Surface Cleanness 214
Dislocations 215
Conclusions 216
References 217
CHAPTER 20. ELECTRICAL PROPERTIES OF SiC DEVICES 218
Single Crystal Semiconductor SiC 218
Growth of Single Crystal SiC 218
Dopant Diffusion in SiC 219
Fabrication Techniques 220
Silicon Carbide Power Diodes 222
SiC p-n Junction Detectors 224
Conclusions 227
Acknowledgement 228
References 228
CHAPTER 21. PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN ALPHA SILICON CARBIDE 230
Introduction 230
Photoluminescence 231
SiC Light-emitting Diodes 232
Acknowledgments 237
References 237
CHAPTER 22. LUMINESCENCE OF SILICON CARBIDE WITH DIFFERENT IMPURITIES 238
Introduction 238
Crystal Doping Methods 239
SiC(B) Luminescence 241
SiC (Be) Luminescence 244
Conclusion 247
References 248
CHAPTER 23. THE TEMPERATURE DEPENDENCE OF PHOTOELECTRIC EFFECTS IN SILICON CARBIDE 250
Introduction 250
Photo-emf 250
Photoconductivity 251
Acknowledgment 254
References 254
CHAPTER 24. THE E.S.R. PROPERTIES OF ELECTRON IRRADIATED HEXAGONAL AND CUBIC SILICON CARBIDE 256
Introduction 256
Experimental Procedure 258
Experimental Results 259
Discussion of Results 262
Acknowledgment 265
References 265
CHAPTER 25. MAGNETIC RESONANCE IN 6H SiC 268
Introduction 268
Nitrogen doped silicon carbide 269
Boron-doped 6H SiC 274
Acknowledgement 279
References 279
CHAPTER 26. ACTIVATION ANALYSIS OF THE IMPURITIES IN SILICON CARBIDE 280
Introduction 280
Activation Analysis of Siliconcarbide 282
Activation with Thermal Neutrons (T.N.A.A.) 282
Activation with charged particles (C.P.A.A.) 282
Decomposition and Chemical Treatment 285
Other Methods of Analysis 286
Experimental 287
Results and Discussion 289
Acknowledgement 289
References 289
CHAPTER 27. THE EPITAXIAL GROWTH OF BETA SILICON CARBIDE 292
Introduction 292
Experimental Procedure 293
Results And Discussion 293
Conclusion 297
Acknowledgement 298
References 298
CHAPTER 28. THE PROPERTIES OF SOME SiC ELECTROLUMINESCENT DIODES 300
Introduction 300
Preparation of SiC Lamps 300
Experimental Procedure 301
Results 302
Discussion of Results 306
Conclusions 309
Acknowledgement 309
References 309
CHAPTER 29. SILICON CARBIDE COED CATHODES 310
Introduction 310
Fabrication of Cathodes 311
Cathode Characteristics 312
Advantages and Potential Applications 317
Acknowledgement 317
References 317
CHAPTER 30. FORMATION OF CRISTOBALITE FROM SILICON CARBIDE 318
Introduction 318
Literature 318
Experimental 320
Testing Methods 321
Results 321
Final Remarks 326
References 326
CHAPTER 31. EQUILIBRIUM COMPUTATIONS ON THE C-Cl-H-Si SYSTEM 328
Acknowledgements 336
References 337
CHAPTER 32. SILICON CARBIDE AS A FISSION PRODUCT BARRIER IN NUCLEAR FUELS 338
Silicon Carbide and the Design of Fuel Particles 338
The Deposition of the Silicon Carbide Layer 341
Conclusion 345
References 346
CHAPTER 33. EPITAXIAL GROWTH OF ß-SILICON CARBIDE 348
Introduction 348
Apparatus and Procedure 349
Experimental Results 350
1. Hydrogen Etch Rates 350
2. Structure and Morphology of Vapor Deposited ß-SiC 352
3. Vapor Growth Kinetics 355
4. p/n Junction Growth by Vapor Deposition 358
5. Diode Characteristics and Electroluminescence 358
Acknowledgment 359
References 360
CHAPTER 34. ELECTRONIC PROPERTIES OF N-TYPE ß-SILICON CARBIDE CRYSTALS GROWN FROM SOLUTION 362
Introduction 362
Experimental 362
Results 365
Discussion 366
Summary 369
Acknowledgments 369
References 370
NUMERICAL DATA 372
AUTHOR INDEX 378

Produkt-Details

• Erscheint lt. Verlag: 22.10.2013
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie ► Anorganische Chemie
• Themenwelt: Technik
• ISBN-10: 1-4831-5261-8 / 1483152618
• ISBN-13: 978-1-4831-5261-5 / 9781483152615