Applications of Silicon-Germanium Heterostructure Devices
Seiten
2001
Institute of Physics Publishing (Verlag)
978-0-7503-0723-9 (ISBN)
Institute of Physics Publishing (Verlag)
978-0-7503-0723-9 (ISBN)
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
C.K Maiti, G.A Armstrong
Introduction. Film Growth and Material Parameters. Principles of SiGe-HBTs. Design of SiGe-HBTs. Simulation of SiGe-HBTs. Strained-Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe-HBTs
| Erscheint lt. Verlag | 20.7.2001 |
|---|---|
| Reihe/Serie | Series in Optics and Optoelectronics |
| Verlagsort | London |
| Sprache | englisch |
| Maße | 156 x 234 mm |
| Gewicht | 839 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| ISBN-10 | 0-7503-0723-4 / 0750307234 |
| ISBN-13 | 978-0-7503-0723-9 / 9780750307239 |
| Zustand | Neuware |
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