Applied RHEED
Reflection High-Energy Electron Diffraction During Crystal Growth
Seiten
2013
|
1. Softcover reprint of the original 1st ed. 1999
Springer Berlin (Verlag)
978-3-662-15614-8 (ISBN)
Springer Berlin (Verlag)
978-3-662-15614-8 (ISBN)
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
MBE-grown semiconductor interfaces.- Reflection high-energy electron diffraction (RHEED).- RHEED oscillations.- Semikinematical simulations of RHEED patterns.- Kikuchi lines.- RHEED with rotating substrates.- Reconstruction-induced phase shifts of RHEED oscillations.- Energy loss spectroscopy during growth.- Phase shifts: Models.- Applications of reconstruction-induced phase shifts.- Closing remarks.
Anyone interested in L.-M. Peng's chapter on RHEED will want to know that an entire volume on the subject has been written by W. Braun (9). This is a substantial work, full of practical detail...
Ultramicroscopy, 2001/87
Erscheint lt. Verlag | 20.11.2013 |
---|---|
Reihe/Serie | Springer Tracts in Modern Physics |
Zusatzinfo | IX, 220 p. 180 illus., 11 illus. in color. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 348 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Naturwissenschaften ► Physik / Astronomie ► Thermodynamik | |
Schlagworte | Electron Energy Loss Spectroscopy • Epitaxy • semiconductor • Simulation • spectroscopy |
ISBN-10 | 3-662-15614-8 / 3662156148 |
ISBN-13 | 978-3-662-15614-8 / 9783662156148 |
Zustand | Neuware |
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