Debye Screening Length

Effects of Nanostructured Materials

Kamakhya Prasad Ghatak, Sitangshu Bhattacharya (Autoren)

Buch | Hardcover

XXXIII, 385 Seiten

2013 | 2014
Springer International Publishing (Verlag)
978-3-319-01338-1 (ISBN)

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This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Professor K. P. Ghatak is the First Recipient of the Degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955 and in the same year he received the prestigious Indian National Science Academy award. He joined as Lecturer in the Institute of Radio Physics and Electronics of the University of Calcutta in 1983, Reader in the Department of Electronics and Telecommunication of Jadavpur University in 1987 and Professor in the Department of Electronic Science of the University of Calcutta in 1994 respectively. His present research interest is nanostructured science and technology. He is the principal co-author of more than 200 research papers on Semiconductor and Nanoscience in eminent peer-reviewed International Journals and more than 50 research papers in the Proceedings of the International Conferences held in USA and many of his papers are being cited many times. Professor Ghatak is the invited Speaker of SPIE, MRS, etc. and is the referee of different eminent Journals.

From the Contents: Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors.- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors.- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.

Erscheint lt. Verlag	14.11.2013
Reihe/Serie	Springer Tracts in Modern Physics
Zusatzinfo	XXXIII, 385 p. 123 illus.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	789 g
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	compound semiconductors • Debye Screening Length • Inversion Layers • Inversion Layers of Non-Parabolic Semiconductors • Low-Simensional Semiconductors • NIPIS • quantized optoelectronic semiconductors • quantum confinement • quantum wells
ISBN-10	3-319-01338-6 / 3319013386
ISBN-13	978-3-319-01338-1 / 9783319013381
Zustand	Neuware