Materials and Reliability Handbook for Semiconductor Optical and Electron Devices (eBook)

Osamu Ueda, Stephen J. Pearton (Herausgeber)

eBook Download: PDF

2012 | 2013
XVI, 616 Seiten
Springer New York (Verlag)
978-1-4614-4337-7 (ISBN)

Infos

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.

The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability.  Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for modern electron and photonic devices. These devices include lasers and high speed electronics used in all aspects of our lives, from cell phones to satellites, data transmission systems and displays. Lifetime prediction for compound semiconductor device operation is notoriously inaccurate due to the fragmented efforts in reliability and the absence of standard protocols. Manufacturers have usually relied on accelerated testing at elevated temperature and then extrapolated back to room temperature operation. This technique frequently fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. Device degradation can be driven by failure in either active structures or passivation layers.

The Handbook addresses reliability engineering for III-V device structures, including materials and electrical characterization, reliability testing, and electronic characterization. These last techniques are used to develop new simulation technologies for device operation and reliability, which in turn allow accurate prediction of reliability as well as the design of structures specifically for improved reliability of operation. Given that a relatively small percentage of devices will actually show failure, it is critical to both enhance the failure rate through accelerated testing and to treat the resulting reliability data correctly. For this reason, the Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. In other words, accelerated aging is useful only if we know the failure mechanism. Also covered are standard Si reliability approaches to determine the instantaneous failure rate and mean time to failure and therefore the distribution functions of greatest relevance to the specific device technology. Furthermore, the Handbook focuses attention on voltage and current acceleration stress mechanisms.

Inhalt

PrefacePart 1: Materials Issues and Reliability of Optical Devices1. Reliability Testing of Semiconductor Optical Devices2. Failure Analysis of Semiconductor Optical Devices3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes8. InGaN Laser Diode Degradation9. Radiation-enhanced Dislocation Glide - The Current Status of Research10. Mechanism of Defect Reactions in SemiconductorsPart 2: Materials Issues and Reliability of Electron Devices11. Reliability Studies in the Real World12. Strain Effects in AlGaN/GaN HEMTs13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors15. Novel Dielectrics for GaN Device Passivation And Improved Reliability16. Reliability Simulation17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy18. Reliability Study of InP-Based HBTs Operating at High Current DensityIndex

Produkt-Details

• Erscheint lt. Verlag: 22.9.2012
• Zusatzinfo: XVI, 616 p.
• Verlagsort: New York
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Optik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: AlGaN/GaN High Electron Mobility Transistors • Devices failure analysis • Devices reliability • Electrical devices degradation failure • Electronic device reliability • Failure Analysis of Semiconductor Optical Devices • GaN Device Passivation • InGaN Laser Diode Degradation • Materials Issues and Reliability of Electron Devices • Materials reliability book • Optical devices degradation failure • Optical Evaluation Technique (OBIC) • Reliability Simulation • Reliability Testing Semiconductor Optical Devices • Semiconductor devices failure • Semiconductor Optical Devices, Reliability Testing • Strain Effects in AlGaN/GaN HEMTs
• ISBN-10: 1-4614-4337-7 / 1461443377
• ISBN-13: 978-1-4614-4337-7 / 9781461443377