Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

Morton B. Panish, Henryk Temkin (Autoren)

Buch | Softcover

XIV, 428 Seiten

2011 | 1. Softcover reprint of the original 1st ed. 1993
Springer Berlin (Verlag)
978-3-642-78129-2 (ISBN)

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The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.

1. Introduction.- 1.1 Introduction to Molecular Beam Epitaxy.- 1.2 Introduction to Gas Source Molecular Beam Epitaxy.- 1.3 Why Gas Sources?.- 1.4 Heterostructures with GSMBE.- 2. Chemistry.- 2.1 Equilibrium, the Phase Diagram, and Molecular Beam Epitaxy.- 2.2 Liquid-Solid-Vapor Relationships for the Growth of InP and GaAs.- 2.3 III-V Solid Solutions.- 2.4 Group III Metalorganics - Metalorganic MBE.- 2.5 Group V Metalorganics to Replace Arsine and Phosphine.- 3. The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy.- 3.1 Background.- 3.2 Molecular Effusion: The Ideal Effusion Cell.- 3.3 Real Effusion Cells.- 3.4 Gas Sources and Their Use in GSMBE.- 3.5 Introduction of the Group III Metalorganics into the MBE System.- 4. Molecular Beam Epitaxy Systems and Procedures.- 4.1 The Conventional Growth Chamber-Configuration for ESMBE, HSMBE and MOMBE.- 4.2 System Pressure - Pumping.- 4.3 Sample Introduction, Transfer and Manipulation.- 4.4 Substrate Temperature Measurement and Control.- 4.5 Gas Handling.- 4.6 Arsine and Phosphine Generators.- 4.7 Safe Handling of Arsine and Phosphine for GSMBE.- 4.8 Procedures for GSMBE.- 4.9 The RHEED Apparatus, Growth Rate and Composition Calibration.- 4.10 Metalorganic MBE Systems - Potential for Scaleup.- 5. Doping During GSMBE.- 5.1 Background.- 5.2 Maximum Free-Carrier Concentrations in Semiconductors.- 5.3 Background Doping and Carbon Incorporation.- 5.4 Doping with Tin.- 5.5 Doping with Be.- 5.6 Zn in InP and GaInAs.- 5.7 Si in GaAs, InP and GaInAs.- 5.8 Semi-insulating InP by Fe Doping During MBE.- 6. Characterization of Heterostructures by High Resolution X-ray Diffraction.- 6.1 X-Ray Diffraction of Epitaxial Layers.- 6.2 Periodic Epitaxial Semiconductor Structures.- 6.3 High-ResolutionX-Ray Diffraction.- 6.4 High-Resolution Rocking Curves of Superlattices.- 6.5 Intrinsic Strain at Heterostructure Interfaces.- 7. Optical Properties of Quantum Wells.- 7.1 Energy Levels in Quantum Wells.- 7.2 Single Quantum Wells.- 7.3 Superlattices.- 7.4 Quantum Wires and Boxes.- 7.5 Electric Field Effects.- 7.6 Strained-Layer Superlattices.- 7.7 Thermal Stability.- 8. Carrier Transport Across Quantum Wells and Superlattices.- 8.1 Experimental Techniques.- 8.2 Motion of Photo-Induced Holes.- 8.3 Sequential Screening.- 8.4 Barrier Height.- 8.5 Heterojunction Band Offsets.- 8.6 Telegraph Noise.- 9. Bipolar Transistors.- 9.1 Background.- 9.2 Figures of Merit.- 9.3 Device Fabrication.- 9.4 DC Characteristics.- 9.5 Temperature Dependence.- 9.6 Carrier Transport.- 9.7 Gain Dependence on the Base Thickness.- 9.8 Microwave Devices.- 9.9 Applications.- 10. Optoelectronic Devices.- 10.1 Broad-Area Lasers.- 10.2 Buried Heterostructure Lasers.- 10.3 Single-Frequency Lasers.- 10.4 Visible Lasers.- 10.5 Photodetectors.- 10.6 Quantum-Well Inter-sub-band Detectors.- 11. In-Situ Processing and Selective Area Epitaxy.- 11.1 Pattern Formation.- 11.2 Ion-Induced Damage.- 11.3 Towards Vacuum Lithography.- 11.4 Buried Heterostructures.- 11.5 Selective-Area Epitaxy.- References.

Erscheint lt. Verlag	30.12.2011
Reihe/Serie	Springer Series in Materials Science
Zusatzinfo	XIV, 428 p.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Gewicht	667 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Optik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
Schlagworte	Chemical Beam Epitaxy • Chemistry • diffraction • Electronics • Epitaxy • Exciton • GaInAsP • Gas Source MBE • Heterostructure Bipolar Transistors • Heterostructure Lasers • Heterostructures • InGaAsP • Laser • Metalorganic MBE • molecular beam epitaxy • Optical communication • optical properties • optoelectronic devices • photodiode • quantum wells • Selective Area Epitaxy • semiconductor • spectroscopy • superlattices • Transistor • Transport
ISBN-10	3-642-78129-2 / 3642781292
ISBN-13	978-3-642-78129-2 / 9783642781292
Zustand	Neuware