Rapid Thermal Processing for Future Semiconductor Devices (eBook)

H. Fukuda (Autor)

eBook Download: PDF

2003 | 1. Auflage
168 Seiten
Elsevier Science (Verlag)
978-0-08-054026-9 (ISBN)

Infos

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.

This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

Inhalt

Front Cover 1
Rapid Thermal Processing for Future Semiconductor Devices 4
Copyright Page 5
CONTENTS 10
Preface 6
RTP2001 Organization 8
Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century 12
Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities 20
Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing 28
Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals 40
Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication 48
Chapter 6. High-Performance Poly-Si TFT and its Application to LCD 60
Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs 70
Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing 74
Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer 80
Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials 86
Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition 94
Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film 104
Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices 110
Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source 118
Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes 126
Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers 132
Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor 140
Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers 144
Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction 150
Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 156

Produkt-Details

• Erscheint lt. Verlag: 2.4.2003
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Quantenphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• ISBN-10: 0-08-054026-0 / 0080540260
• ISBN-13: 978-0-08-054026-9 / 9780080540269