High Pressure Semiconductor Physics I (eBook)

William Paul, Tadeusz Suski (Herausgeber)

eBook Download: PDF

1998 | 1. Auflage
577 Seiten
Elsevier Science (Verlag)
978-0-08-086452-5 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston–cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "e;Willardson and Beer"e; Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial pistoncylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

Inhalt

Cover 1
Contents 6
Chapter 1. High Pressure in Semiconductor Physics: A Historical Overview 16
I. Introduction 17
II. Experiments on Bulk Samples of the Zincblende Family to 1970 19
III. Theoretical Calculations of the Effect of Pressure on Bulk Band Structures 30
IV. Current Studies of Bulk Semiconductors of the Zincblende Family 33
V. Quantum Wells, Heterostructures, and Superlattices 40
VI. Structural Phase Transitions 44
VII. Other Materials 48
VIII. Other Matters 53
References 53
Chapter 2. Electronic Structure Calculations for Semiconductors under Pressure 64
I. Introduction 64
II. BasicTheory 65
III. ASA-LDA.Ž Frozen-Potential MethodŽ 84
IV. Deformation Potentials 94
V. Pressure-Induced Structural Changes 113
Vl. Pressure Dependence of Phonon Frequencies 145
VII. Concluding Remarks 149
References 151
Chapter 3. Structural Transitions in the Group IV, III-V and II-VI Semiconductors Under Pressure 160
I. Introduction 161
II. Structures 165
III. Individual Systems 190
IV. Discussion 248
V. Concluding Remarks 259
Chapter 4. Optical Properties of Semiconductors Under Pressure . 262
I. Introduction 263
II. Experimental Aspects 266
III. Electronic Band Structure Under Pressure 274
IV. Refractive Index Dispersion 288
V. Optical Absorption Near the Fundamental Gap 300
VI. Effect of Pressure on Exciton Absorption 312
VII. Photoluminescence Studies Under Pressure 336
VIII. Photomodulated Reflectance 357
IX. Optical Properties of Electron Gases Under Pressure 366
X. High Pressure Phases 400
Acknowledgments 424
References 425
Chapter 5. Defects 10
Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs 442
I. Introduction 442
II. Basic Properties of the EL2 Defect 443
III. Piezospectroscopic Investigations of No-Phonon Lines of EL2 451
IV. Studies of the EL2 Defect Under Hydrostatic Pressure 455
V. Microscopic Nature of the Metastable State of EL2 460
VI. Conclusions 468
References 468
Chapter 5.2 High-pressure Study of DX Centers Using Capacitance Techniques 472
I. Introduction 472
II. Techniques for Electrical Measurements on Samples Inside the DAC 474
III. Introduction to Capacitance Transient Techniques 477
IV. Experimental Studies of DX Centers 482
V. Concluding Remarks 496
Acknowledgments 497
References 497
Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors 500
I. Introduction 500
II. Experimental Techniques 502
III. Donor-charges in HgSe : Fe 502
IV. Donor States in GaAs and AlGaAs 505
V. Experimental Studies of Spatial Correlations for DX-center Charges in Bulk Semiconductors 510
VI. Spatial Correlations of Remote Impurity Charges 517
VII. Remote-Charge Correlations and Quantum Transport of 2 DEG 520
VIII. Concluding Remarks 523
References 525
Chapter 6 Pressure Effects on the Electronic Properties of Diluted Magnetic Semiconductors 528
I. Introduction 528
II. Structural Properties 530
III. Electronic Properties 538
IV. Superstructures 558
V. Miscellaneous 560
Acknowledgments 561
References 562
Index 566

Produkt-Details

• Erscheint lt. Verlag: 9.9.1998
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Quantenphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-086452-X / 008086452X
• ISBN-13: 978-0-08-086452-5 / 9780080864525