Hydrogen in Semiconductors II (eBook)

Norbert H. Nickel (Herausgeber)

eBook Download: PDF

1999 | 1. Auflage
526 Seiten
Elsevier Science (Verlag)
978-0-08-052525-9 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Key Features
* Provides the most in-depth coverage of hydrogen in silicon available in a single source
* Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "e;Willardson and Beer"e; Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source- Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors- Combines both experimental and theoretical studies to form a comprehensive reference

Inhalt

Front Cover 1
Hydrogen in Semiconductors II 4
Copyright Page 5
Contents 6
Preface 12
List of Contributors 14
Chapter 1. Introduction to Hydrogen in Semiconductors 16
Chapter 2. Isolated Monatomic Hydrogen in Silicon 28
I. Introduction 28
II. Theory 29
III. Experment 33
IV. Conclusions 36
References 37
Chapter 3. Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon 40
I. Introduction 40
II. Interstitial (BC) Hydrogen in Silicon 43
III. EPR of Hydrogen-Related Complexes in Silicon 60
IV. Hydrogen-Induced Effects in Silicon 66
V. Summary and Conclusions 90
References 92
Chapter 4. Hydrogen in Polycrystalline Silicon 98
I. Introduction 98
II. Experimental Techniques 100
III. Hydrogen Diffusion 102
IV. Hydrogen Passivation of Grain-Boundary Defects 125
V. Metastability 139
VI. Hydrogen-Induced Defects During Plasma Exposure 158
VII. Summary and Future Directions 174
References 176
Chapter 5. Hydrogen Phenomena in Hydrogenated Amorphous Silicon 180
I. Introduction 180
II. Material Characterization by Hydrogen Effusion and Infrared Absorption 181
III. Experimental Hydrogen Diffusion and Solubility Data 197
IV. Hydrogen Diffusion and Effusion Effects 214
V. Hydrogen Solubility Effects 245
VI. Conclusions 250
References 251
Chapter 6. Hydrogen Interactions with Polycrystalline and Amorphous Silicon–Theory 256
I. Introduction 256
II. Hydrogen Interactions with Amorphous Silicon 263
III. Hydrogen in Polycrystalline Silicon 286
IV. Conclusions and Future Directions 292
References 293
Chapter 7. Hydrogen in Polycrystalline CVD Diamond 298
I. Introduction 298
II. Solid-State Characterization Techniques 301
III. Results of Solid-State Analysis 309
IV. Effects of Hydrogen on Observed Properties 320
References 324
Chapter 8. Dynamics of Muonium Diffusion, Site Changes, and Charge-State Transitions 326
I. Introduction 326
II. Experimental Techniques 331
III. Identification and Characterization of Muonium States 343
IV. Dynamics of Muonium Transitions 356
V. Relevance to Hydrogen Impurities 381
References 384
Chapter 9. Hydrogen in III-V and II-VI Semiconductors 388
I. Introduction 388
II. Hydrogen in III-V Semiconductors 391
III. Hydrogen in II-VI Semiconductors 441
IV. Summary and Discussion 449
References 451
Chapter 10. The Properties of Hydrogen in GaN and Related Alloys 456
I . Introduction 456
II. Hydrogen in As-Grown Nitrides 457
III. Dopant Passivation 465
IV. Diffusion and Reactivation Mechanisms 471
V. Role of Hydrog during Processing 484
VI. Theory of Hydrogen in Nitrides 487
VII. Summary and conclusions 491
References 492
Chapter 11. Theory of Hydrogen in GaN 494
I. Introduction 494
II. Method 496
III. Monatomic Hydrogen in Gan 498
IV. Hydrogen Molecules in Gan 504
V. Hydroggen -Acceptor Complexes in Gan 504
VI. Complexes of H with Native Defects 507
VII. Role of Hydrogen in Doping Gan 510
VIII. General Criteria for Hydrogan to Enhance Doping 514
IX. Concllsions and Outlook 515
References 516
Index 518
Contents of Volumes in This Series 524

Produkt-Details

• Erscheint lt. Verlag: 5.5.1999
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Quantenphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-052525-3 / 0080525253
• ISBN-13: 978-0-08-052525-9 / 9780080525259