Identification of Defects in Semiconductors (eBook)

Michael Stavola (Herausgeber)

eBook Download: PDF

1998 | 1. Auflage
376 Seiten
Elsevier Science (Verlag)
978-0-08-086448-8 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.TheWillardson and BeerSeries, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"e;Willardson and Beer"e;Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Inhalt

Front Cover 1
Identification of Defects in Semiconductors 4
Copyright Page 5
Contents 6
Preface 10
List of Contributors 14
Chapter 1. EPR and ENDOR Studies of Defects in Semiconductors 16
I. Introduction 16
II. The EPR/ENDOR Experiment 18
III. Theory of EPR and ENDOR 19
IV. Additional Examples 31
V. Auxiliary Techniques 43
Chapter 2. Magneto-Optical and Electrical Detection of Paramagnetic Resonance in Semiconductors 60
I. Introduction 60
II. Magneto-Optical Detection of EPR and ENDOR 63
III. Electrical Detection of EPR (EDEPR) 88
IV. Electrical Detection of ENDOR (EDENDOR) 99
V. New Possibilities 101
References 105
Chapter 3. Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence 108
I. Introduction 108
II. Fundamentals of ODMR and Epitaxy 109
III. Illustrative Example: Bulk InP:Zn 119
IV. Examples in Epilayers 128
V. Summary and Future Directions 148
References 149
Chapter 4. µSR on Muonium in Semiconductors and Its Relation to Hydrogen 152
I. Introduction 153
II. Fundamentals of µSR in Semiconductors 158
III. Experimental Techniques and Examples 170
IV. Summary 217
References 219
Chapter 5. Positron Annihilation Spectroscopy of Defects in Semiconductors 224
I. Introduction 225
II. Positrons in Solids 226
III. Positron Trapping 233
IV. Experimental Techniques 237
V. Identification of Vacancies and Their Charge States 247
VI. Negative Ions as Shallow Positron Traps 258
VIl. Defects in Layers Studied by a Low-Energy Positron Beam 265
VIII. Investigation of Vacancy Ionization Levels 273
IX. Investigation of the Atomic Structures of Metastable Defects 283
X. Summary 297
References 297
Chapter 6. The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors 302
I. Introduction 303
II. The Many-Body Problem 305
III. Pseudopotential Theory 321
IV. The Real-Space Cluster Method 325
V. Self-Consistency and Atomic Forces 334
VI. Structural Optimization 339
VII. Determination of Vibrational Modes 342
VIII. Practical Considerations 347
IX. Applications 352
X. Summary 360
References 361
Index 366
Contents of Volumes in This Series 376

Produkt-Details

• Erscheint lt. Verlag: 2.7.1998
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-086448-1 / 0080864481
• ISBN-13: 978-0-08-086448-8 / 9780080864488