From Physics to Devices: Light Emissions in Silicon (eBook)

Light Emissions in Silicon: From Physics to Devices

David J. Lockwood (Herausgeber)

eBook Download: PDF

1997 | 1. Auflage
351 Seiten
Elsevier Science (Verlag)
978-0-08-086446-4 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.TheWillardson and BeerSeries, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"e;Willardson and Beer"e;Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Inhalt

Front Cover 1
Light Emission in Silicon: From Physics to Devices 4
Copyright Page 5
Contents 6
List of Contributors 10
Abstract 12
Preface 14
Chapter 1. Light Emission in Silicon 18
I. Introduction 18
II. The Optoelectronic Age 19
III. Physical Properties of Si 21
IV. Methods for Overcoming the Indirect Bandgap Limitations in Si 23
V. Prospects for Si Based Optoelectronic Devices 43
References 46
Chapter 2. Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures 54
I. Introduction 54
II. Structural Properties 57
Ill. Bandgaps, Band Offsets, and Brillouin Zone Folding 61
IV. Photoluminescence, Electroluminescence, and Photocurrent Measurements 71
V. Concluding Remarks 87
Acknowledgments 87
References 88
Chapter 3. Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices 94
I. Introductory Concepts 95
II. Isoelectronic Bound Exciton Emission from c-Si 100
III. Isoelectronic Bound Exciton Emission in Be-Doped SiGe Alloys: A Case Study 111
IV. Device Considerations 120
V. Concluding Remarks 123
References 124
Chapter 4. Erbium in Silicon 128
I. Introduction 128
II. Er Doping of Si 130
III. Diffusivity and Solubility 138
IV. Light Emission 144
V. Electronic Structure 159
VI. Light Emitting Diode Design 167
VII. Summary 170
Acknowledgments 170
References 170
Chapter 5. Silicon and Germanium Nanoparticles 174
I. Introduction 174
II. Fabrication of Silicon (Si) and Germanium (Ge) Nanoparticles 175
III. Photoluminescence Mechanism 187
IV. Unique Optical Phenomena 206
V. Summary 217
Acknowledgments 218
References 219
Chapter 6. Porous Silicon: Photoluminescence and Electroluminescent Devices 222
I. Introduction 223
II. Properties of the PL Bands 227
III. Origin of the Intrinsic PL Bands 235
IV. Pure Quantum Confinement and Surface States: A Critical Discussion 243
V. Nonoptical Properties 250
VI. Electroluminescent Devices 255
VII. Conclusions and Outlook 263
Chapter 7. Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites 270
I. Introduction 270
II. Electronic Properties 271
III. Optical Transitions and Radiative Lifetime 275
IV. Exchange Splitting and Symmetry of the Crystallites 279
V. Atomic Relaxation, Stokes Shift, and Self-trapped Exciton 286
VI. Nonradiative Recombination 296
VII. Screening in Nanocrystallites and Coulomb Charging Effects 309
VIII. Conclusion 315
References 316
Chapter 8. Silicon Polymers and Nanocrystals 320
I. Introduction 320
II. Silicon Polymers in One, Two, and Three Dimensions 321
III. Passivated Silicon Nanocrystals 325
IV. Electron Transport in Porous Nanocrystal Materials 339
Acknowledgments 342
References 343
Index 346
Contents of Volumes in This Series 354

Produkt-Details

• Erscheint lt. Verlag: 14.11.1997
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-086446-5 / 0080864465
• ISBN-13: 978-0-08-086446-4 / 9780080864464