Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization (eBook)

Constantinos Christofides, Gerard Ghibaudo (Herausgeber)

eBook Download: PDF

1997 | 1. Auflage
316 Seiten
Elsevier Science (Verlag)
978-0-08-086443-3 (ISBN)

Infos

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Key Features
* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects- Focuses on physical mechanisms of defect annealing- Utilizes electrical, physical, and optical characterization tools for processed semiconductors- Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Inhalt

Cover 1
Contents 8
Chapter 1. Ellipsometric Analysis 18
I. Introduction 18
II. Principle of Ellipsometry 20
III. General Remarks 21
IV. Optical Models 24
V. The Complex Dielectric Function 26
VI. Light Penetration 30
VII. Effective Medium Theory 30
VIII. Examples 32
IX. Sophisticated Multilayer Optical Models 44
X. Closing Remarks 48
References 51
Chapter 2. Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors 56
I. Introduction 56
II. General Overview 57
III. Recent Optical Experimental Studies on Implanted Silicon 64
IV. Theoretic Background 77
V. Discussion and Analysis 79
VI. Summary 85
References 86
Chapter 3. Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing 90
I. Introduction 90
II. Photoluminescence and Raman Scattering Theory 91
III. Photoluminescence and Raman Scattering Techniques 96
IV. Characterization of Ion-Implanted Semiconductors 101
V. Summary and Future Perspectives 128
References 129
Chapter 4. Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects 132
I. Introduction 132
II. Photomodulated Thermoreflectance Theory 133
III. Experimental Methodology 136
IV. Experimental Results and Discussion 139
V. Recent Developments 161
VI. Summary and Future Perspectives 163
References 164
Chapter 5. Photothermal Deflection Spectroscopy Characterization of Ion-Implanted and Annealed Silicon Films 168
I. Introduction 168
II. Theory and Experiment 171
III. Results and Discussion 175
IV. Conclusions 191
References 191
Chapter 6. Photothermal Deep-Level Transient Spectroscopy of Impurities and Defects in Semiconductors 196
I. Introduction 196
II. Physical Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy 198
III. Theory of Photothermal Radiometric Deep-Level Transient Spectroscopy 201
IV. Instrumental Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy: The Lock-In Rate-Window Method 205
V. Experiment and Discussion 207
VI. Potential for Ion-Implantation Diagnostics and Conclusions 224
References 226
Chapter 7. Ion Implantation into Quantum-Well Structures 230
I. Introduction 230
II. General Background 233
III. Ion-Beam-Induced Modifications of QW Structures 247
IV. Future Trends and Applications 265
References 268
Chapter 8. Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors 274
I. Introduction 274
II. Materials and Impurities 275
III. Ion Implantation 278
IV. Annealing 296
V. Conclusion 307
References 308
Index 312

Produkt-Details

• Erscheint lt. Verlag: 12.6.1997
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-086443-0 / 0080864430
• ISBN-13: 978-0-08-086443-3 / 9780080864433