SiC Materials and Devices (eBook)

eBook Download: PDF

1998 | 1. Auflage
420 Seiten
Elsevier Science (Verlag)
978-0-08-086450-1 (ISBN)

Infos

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Inhalt

Front Cover 1
Sic Materials and Devices 4
Copyright Page 5
Contents 6
List of Contributors 10
Introduction 12
Chapter 1. Materials Properties and Characterization of SiC 16
I. Introduction 16
II. Structural Properties 17
III. Thermal Properties 29
IV. Optical Properties 29
V. Electrical Properties 31
VI. Summary 32
References 33
Chapter 2. SiC Fabrication Technology: Growth and Doping 36
I. Introduction 36
II. SiC Bulk Crystal Growth 37
III. SiC Epitaxial Growth 50
IV. SiC Doping 75
V. Conclusions 77
References 33
Chapter 3. Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions 92
I. Introduction 92
II. Electrical Properties of Metal–SiC Systems 96
Ill. Surface Preparation Techniques 101
IV. Metal Contacts to 6H-SiC 102
V. Metal Contacts to 4H-SiC 133
VI. Metal Contacts to 3C-SiC 140
VII. SiC p-n Junctions Diode Rectifiers 146
VIII. Summary and Conclusions 164
References 166
Chapter 4. SiC Transistors 176
I. Introduction 176
II. SiC Field-Effect Transistors: MOSFETs, MESFETs, and JFETs 177
III. SiC Microwave Field-Effect Transistors 192
IV. SiC Digital Integrated Circuits 195
V. SiC Bipolar Transistors and Thyristors 197
VI. Two-Dimensional Modeling of SiC Transistors 200
VII. Analytical Transistor Models and Circuit Simulation (AIM-Spice) 201
VIII. Potential Performance and Applications of SiC Transistors and Integrated Circuits 203
References 204
Chapter 5. SiC for Applications in High-Power Electronics 210
I. Introduction 210
II. Bulk SiC Growth 213
III. Epitaxial Growth of SiC 217
IV. Advantages of SiC for High-Power RF Systems 219
V. The SiC MESFET: Design Considerations 220
VI. MESFET Fabrication 222
VII. 6H-SiC MESFET Results 224
VIII. 4H-SiC MESFET Results 226
IX. The SiC SIT: Design Considerations 227
X. SIT Fabrication 230
XI. 6H-SiC SIT Results 232
XII. 4H-SiC SIT Results 234
XIII. 450 W UHF SIT 236
XIV. 2.0 kW UHF Module 237
XV. S-band SiC SITs 238
XVI. S-band SIT Device Scale-up 239
XVII. SiC Power Switching Devices 241
XVIII. Conclusions 246
References 247
Chapter 6. SiC Microwave Devices 252
I. Introduction 252
II. Background 254
III. Semiconductor Material and Contact Properties 256
IV. Semiconductor Device Models 262
V. Temperature Effects 265
VI. RF Active Devices 267
VII. Summary 294
References 295
Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes 298
I. Introduction 298
II. SiC Blue LEDs 301
III. SiC Green LEDs 303
IV. UV Photodiodes 305
V. Group III-Nitrides on 6H-SiC 312
VI. Summary 320
References 321
Chapter 8. Beyond Silicon Carbide! III–V Nitride-Based Heterostructures and Devices 322
I. Introduction 322
II. Strain and Structural Defects 324
III. Optical Manifestation of Defects 350
IV. Applications 357
V. Conclusions 404
References 405
Index 410
Contents of Volumes in this Series 420

Produkt-Details

• Erscheint lt. Verlag: 2.7.1998
• Mitarbeit: Herausgeber (Serie): Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-086450-3 / 0080864503
• ISBN-13: 978-0-08-086450-1 / 9780080864501