Physical Limitations of Semiconductor Devices (eBook)

Vladislav A. Vashchenko, V. F. Sinkevitch (Autoren)

eBook Download: PDF

2008 | 2008
XIII, 330 Seiten
Springer US (Verlag)
978-0-387-74514-5 (ISBN)

Infos

Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

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Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.

Inhalt

Failures of Semiconductor Device.- Theoretical Basis of Current Instability in Transistor Structures.- Thermal Instability Mechanism.- Isothermal Current Instability in Silicon BJT and MOSFETs.- Isothermal Instability in Compound Semiconductor Devices.- Degradation Instabilities.- Conductivity Modulation in ESD devices.- Physical Approach to Reliability.

Produkt-Details

• Erscheint lt. Verlag: 22.3.2008
• Zusatzinfo: XIII, 330 p.
• Verlagsort: New York
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie ► Analytische Chemie
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: bipolar junction transistor • bipolar power transistor • catastrophic failures • Development • Electrostatic Discharge • ESD • Failure analysis • field-effect transistor • Leistungsfeldeffekttransistor • local structural inhomogeneities • metal oxide semiconductur field-effect transistor • safe-operating area • semiconductors • Sinkevitch • SOA • Transistor • Vashchenko
• ISBN-10: 0-387-74514-9 / 0387745149
• ISBN-13: 978-0-387-74514-5 / 9780387745145