Shallow Impurities in Semiconductors IV

Buch | Softcover

502 Seiten

1991
Trans Tech Publications Ltd (Verlag)
978-0-87849-619-8 (ISBN)

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Coverage includes: defect in semiconductors.

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs
Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs
A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing
Control of Shallow Boron Profile in Silicon
Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
Electron-Hole Mechanism of Migration and Defect Interaction
Delta-Doping in III-V Semiconductors
Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
Photoluminescence and Excitation Study of Delta Doped GaAs
Shallow Impurity Bands in δ-Doped Quantum Wells
Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs
Bound Excitons in Quantum Wells
Excited Shallow Impurity States in Quantum Well Structures: Correspondences between the Low-Field and High-Field Limits
Time Resolved Far Infra-Red Magnetospectroscopy in GaAs/AlGaAs MQWs
Polarized Luminescence Study of Shallow Acceptors in Short-Period Superlattices
Excited-State Spectroscopy of Shallow Donor Impurities in GaAs/AlGaAs Multi-Quantum Wells
Two-Dimensional D- States in Selectively Doped GaAs-GaAlAs Multi-Quantum Wells
Infrared Absorption Coefficient for Shallow Donors in a Quantum Well
Optical Absorption Spectra Associated to Shallow Impurities in GaAs-(Ga,Al)As Quantum Well Wires
Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors
Sulfur-Hydrogen Donor Complexes in Silicon
Photothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in Silicon
Valence Force Models as a Test of Atomic Models
Hydrogen-Impurity Complexes in GaAs
An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation
Diffusion of Deuterium in ZnHgTe and CdHgTe as a Function of Composition
Ultra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in Silicon
Host-Lattice Isotope Dependence of Acceptor Bound-Exciton Luminescence in Diamond
Fine Structure of Bound Exciton Luminescence in Uniaxially Stressed Si:B
New Features in the Photoluminescence Spectra of Bound Multiexciton Complexes in Uniaxially Stressed Boron Doped Silicon
Photoluminescence Excitation Spectroscopy of Donors in Ge
Lattice Distortions and Exciton Bound to Nitrogen in GaP-Rich A3B5 Alloys
Binding of Excitons around Hg Atoms in ZnxHg1-x Te and CdxHg1-xTe Alloys
Shallow Acceptor Bound-Excitons in CdTe Epitaxial Layers on (100) GaAs
Magneto-Transport in Stressed Si:B in the Localization Regime
Aluminum Related Thermally Induced Defects in Silicon
Shallow Copper-Related Complexes in P-Type Silicon
The Electron Structure and Spectra of Shallow Non-Hydrogenlike Impurities in Semiconductors. II. Acceptors in Silicon
Interaction of Phosphorus with Dislocation Cores in Silicon
Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities
Iron- and Chromium-Indium Pairs in Silicon
Ab Initio Calculations on Interstitial O Clusters in Si
Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results
Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si
On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium
Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium
Spectral Dependence of the Shallow Impurity Optical Absorption Cross Section in Germanium
Resonance States of a Shallow Acceptor in Degenerate Anisotropic Band Semiconductor
Bistability of Thermal Donors in Germanium Investigated by Far-IR Spectroscopy
Shallow Impurity Spectroscopy Using Cyclotron Resonance Lasers
The Influence of Metallic Contamination on the Lattice Relaxation of GexSi1-x Epitaxial Alloys
Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus
A FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAs
Electronic Structure of Be-Doped GaAs
High Resolution Magneto-Optical Studies of the Donors in MOCVD InP
Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs
The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy
Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs Heterostructures
Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs
Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs
Characterization of Fast Neutron Irradiated GaAs Films by Photoluminescence Spectroscopy
Thermodynamic Study of Annealing Process of Si-Implanted GaAs
Theoretical Description of Donor Bistability in CdF2
DX-Like Centres in Semiconductors: Metastability, Bistability and Negative U
Magneto-Optical Investigations of DX Centres in AlxGa1-xAs
Localized Electronic States with A1 Symmetry of Substitutional Impurities - are they DX Centres?
Photo-Ionization and Metastability of the DX Center in GaAlAs Alloys
DX-Centers in Silicon δ-Doped GaAs and AlxGa1-xAs?
Tunable Apparition of the DX-Linked Level by Photoexcitation in AlGaAs in Magnetic Freezeout Experiments under Hydrostatic Pressure
Shallow States of the DX Centre in AlGaAs: Sn Probed by Admittance Spectroscopy

Reihe/Serie	Materials Science Forum ; Volumes 65-66
Verlagsort	Zurich
Sprache	englisch
Maße	170 x 240 mm
Gewicht	1150 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
Themenwelt	Technik ► Maschinenbau
ISBN-10	0-87849-619-X / 087849619X
ISBN-13	978-0-87849-619-8 / 9780878496198
Zustand	Neuware