Nicht aus der Schweiz? Besuchen Sie lehmanns.de
Optical Characterization of Semiconductors -

Optical Characterization of Semiconductors

D.B. Kushev (Herausgeber)

Buch | Softcover
252 Seiten
1992
Trans Tech Publications Ltd (Verlag)
978-0-87849-632-7 (ISBN)
CHF 179,95 inkl. MwSt
  • Titel ist leider vergriffen;
    keine Neuauflage
  • Artikel merken
Proceedings of the Satellite Conference of the 20th International Conference on the Physics of Semiconductors, Sofia, Bulgaria, 1990

Optical Investigation of Novel PbTe p-i-n-i-p Structures
Optical Control of Electrical and Structural Thin Film Prperties
Optical Indentification of PbO Films Crystal Modification
Optical Spectroscopy of GaAs Layers Grown by MOVPE
Optical Properties of Amorphous and Microcrystalline Si-Ge Thin Films
The Influece of High-Temperature Annealing on the Transient Optical and Structure Properties of Semi-Insulating GaAs
Radiative and Nonradiative Recombination Processes in Ion Implanted Semi-Insulating GaAs
EL2 Intracenter Transition in Photoconductivity Spectra of Semi-Insulating GaAs:Cr
IR Reflection from Semiconductor Multilayered Structures with the Composition Gradient Layers
The Energy Gaps in SiXGe1-X Alloys
Optical Characterization of Monolayer Islands and Interface Effects in InGaAs/InP Multiquantum Well Structures
Photoluminescence Probing the Si Incorporation in MBE Grown AlXGa1-XAs
Associates of Charged Defects in Gallium Arsenide: Calculation and Photoluminescence Data
Photoluminescence of Bismuth Doped GaSb
Optical Effects in Thin Layers
Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors
Visible Light Characterization of Sillicon on Insulator Materials
Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
The Origin of the M-Centre in Zinc Selenide
Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
Lattice Relaxation Effect on Bound Exciton in Ga1-XInXP:N
Optical Absorption Cross-Section of Sb in Ge
Photoluminescence Evaluation of n-Type GaAs LPTT Layers Grown from a Bi-Solution
Photoreflectance Characterization of the Internal Electric Fields across the N-Type GaAs/Al0.3Ga0.7As Heterojunctions in MBE Grown Material
Comparison of Far Infrared and Raman Spectroscopy for Studying Phonon Confinement in Superlattices
Far Infrared Attenuatted Total Reflection Spectroscopy for Studying Superlattice Structures
Optical Characterization of A3-B5 Semiconductors, Heterstructures and Quantum Wells by Photoreflectance
FIR Spectroscopy of PbTe Films on KCI Substrates
Hot LO-Phonon Population in A3-B5 and A2-B6 Semiconductors and in AlGaAs-GaAs Quantum Wells
Light Selfdiffraction Spectra in CdSe at 4.2 K
Ellipsometric Diagnostics of the GaAs-Oxide Structure
Anisotropic Excitons in a Magnetic Field

Reihe/Serie Key Engineering Materials ; Volume 65
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 580 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Technik Maschinenbau
ISBN-10 0-87849-632-7 / 0878496327
ISBN-13 978-0-87849-632-7 / 9780878496327
Zustand Neuware
Haben Sie eine Frage zum Produkt?
Mehr entdecken
aus dem Bereich
Theoretische Physik II

von Peter Reineker; Michael Schulz; Beatrix M. Schulz …

Buch | Softcover (2022)
Wiley-VCH (Verlag)
CHF 76,85