Fundamentals of Solid State Engineering
Springer-Verlag New York Inc.
978-1-4419-4712-3 (ISBN)
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Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication
Covers wide range of topics in the same style and in the same notation
Most up to date developments in semiconductor physics and nano-engineering
Mathematical derivations are carried through in detail with emphasis on clarity
Timely application areas such as biophotonics , bioelectronics
Crystalline Properties of Solids.- Introduction.- Crystal lattices and the seven crystal systems .- The unit cell concept.- Bravais lattices .- Point groups.- Space groups.- Directions and planes in crystals: Miller indices.- Real crystal structures.- Summary.- Further reading.- Problems.- The Reciprocal Lattice.- Introduction.- Diffraction by a crystal.- Structure factor.- Atomic form factor.- First Brillouin zone.- Summary.- References.- Further reading.- Problems.- Electronic Structure of Atoms.- Introduction.- Spectroscopic emission lines and atomic structure of hydrogen.- Atomic orbitals.- Structures of atoms with many electrons.- Bonds in solids.- Introduction to energy bands.- Summary.- Further reading.- Problems.- Introduction to Quantum Mechanics.- The quantum concepts.- Elements of quantum mechanics.- Simple quantum mechanical systems.- Summary.- Further reading.- Problems.- Electrons and Energy Band Structures in Crystals.- Introduction.- Electrons in a crystal.- Band structures in real semiconductors.- Band structures in metals.- Summary.- References.- Further reading.- Problems.- Phonons.- Introduction.- Interaction of atoms in crystals: origin and formalism.- One-dimensional monoatomic harmonic crystal.- Sound velocity.- One-dimensional diatomic harmonic crystal.- Phonons.- Summary.- Further reading.- Problems.- Thermal Properties of Crystals.- Introduction.- Phonon density of states (Debye model).- Heat capacity.- Thermal expansion.- Summary.- References.- Further reading.- Problems.- Equilibrium Charge Carrier Statistics in Semiconductors.- Introduction.- Density of states.- Effective density of states (conduction band).- Effective density of states (valence band).- Mass action law.- Doping: intrinsic vs. extrinsic semiconductor.- Charge neutrality.- Fermi energy as a function of temperature.- Carrier concentration in a semiconductor.- Summary.- Further reading.- Problems.- Non-Equilibrium Electrical Properties of Semiconductors.- Introduction.- Electrical conductivity.- Doping.- Charge carrier diffusion.- Carrier generation and recombination mechanisms.- Summary.- Further reading.- Problems.- Semiconductor Junctions.- Introduction.- Ideal p-n junction at equilibrium.- Non-equilibrium properties of p-n junctions.- Deviations from the ideal p-n diode case.- Metal-semiconductor junctions.- Summary.- Further reading.- Problems.- Optical Properties of Semiconductors.- Introduction.- Electron-photon interaction.- The dielectric permitivity of a solid.- Excitons.- Phonon-photon interaction.- Plasmons.- Electro-optical properties.- Electrons in a magnetic field.- Nonlinear optical properties.- Optical properties of important semiconductors.- Summary.- References.- Further reading.- Problems.- Low Dimensional Quantum Structures.- Introduction.- two-dimensional structures: quantum wells.- One-dimensional structures: quantum wires.- Zero-dimensional structures: quantum dots.- Examples of low dimensional structures.- Optical properties of 3D, 2D, 1D and 0D structures.- Summary.- References.- Further reading.- Problems.- Semiconductor Heterostructures.- Introduction.- Energy band offsets.- Type I alignment.- Type II alignments.- Summary.- References.- Further reading.- Problems.- Compound Semiconductors and Crystal Growth Techniques.- Introduction.- III-V semiconductor alloys.- Bulk single crystal growth techniques.- Epitaxial growth techniques.- Summary.- References.- Further reading.- Problems.- Silicon and Compound Semiconductor Device Technology.- Introduction.- Oxidation in Silicon.- Diffusion of dopants.- Ion implantation of dopants.- Characterization of diffused and implanted layers.- Summary.- References.- Further reading.- Problems.- Semiconductor Chara
| Erscheint lt. Verlag | 5.11.2010 |
|---|---|
| Zusatzinfo | 65 Tables, black and white; 350 Illustrations, black and white; XXVIII, 764 p. 350 illus. |
| Verlagsort | New York, NY |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 1187 g |
| Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 1-4419-4712-4 / 1441947124 |
| ISBN-13 | 978-1-4419-4712-3 / 9781441947123 |
| Zustand | Neuware |
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