Transport in Metal-Oxide-Semiconductor Structures
Mobile Ions Effects on the Oxide Properties
Seiten
2011
|
2011
Springer Berlin (Verlag)
978-3-642-16303-6 (ISBN)
Springer Berlin (Verlag)
978-3-642-16303-6 (ISBN)
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
Introduction.- The MOS Structure.- The MOS Oxide and Its Defects.- Review of Transport Mechanism in Thin Oxides of MOS Devices.- Experimental Techniques.- Theoretical Approaches of Mobile Ions Density Distribution Determination.- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.
| Erscheint lt. Verlag | 16.1.2011 |
|---|---|
| Reihe/Serie | Engineering Materials |
| Zusatzinfo | XIV, 106 p. |
| Verlagsort | Berlin |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 320 g |
| Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| Schlagworte | density distribution • Halbleiter • Ionic transport mechanism • MOS • MOS-Schaltungen • Silicon dioxide |
| ISBN-10 | 3-642-16303-3 / 3642163033 |
| ISBN-13 | 978-3-642-16303-6 / 9783642163036 |
| Zustand | Neuware |
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