Gallium Arsenide II
Trans Tech Publications Ltd (Verlag)
978-0-87849-555-9 (ISBN)
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Gallium Arsenide presents 63 important papers given at the second international conference on the Physics and Technology of GaAs and other III-V Compounds, held in Budapest, Hungary, Sept. 1986. The wealth of new information presented at the conference focussed on the following research areas:
The Preparation and Analysis of Active Layers Prepared by Si+ through Si3N4 Implantation into Sl GaAs/Cr/
Vanadium-Doped Bulk and Epitaxial GaAs, Studied by Photoluminescence and Photoconductivity
The Use of Anisotropically Etched Gallium Arsenide Surfaces in Optoelectronics
Real Structure of AS-Grown GaAs Crystals
Growth of GaAs Epitaxial Layers at Low Temperatures
Study of Selective Zinc Diffusion in InP
Deposition Methods for Dielectric Films
Distribution of Free Carrier Concentration across N-Type LEC-InP Wafers
The Study of the Interface in GaAs-Ge and GaAs-Ge1-xSix Heterosystems
LPE Growth of GaInAsP/InP DH
Crystal Growth of Sl-GaAs and Its Investigation after Heat Treatment
The Application of GaAs Epitaxy from the Ga-HCl-AsH3-H2 System to Micro-Wave Device Technology
Dopant Distribution and Electrical Activation of Si Implanted GaAs by Short Time Annealing
Influence of Substrate Defect Structure on the Structure Perfection of Heteroepitaxial Layers GaAs1-xPx/GaAs (x=0.4)
The Influence of Growth Conditions on Electrical and Optical Properties of High Quality LPE GaAs Layers
Growth of InGaAsP/InP Heterostructures for Optolectronic Application
The Use of Ga-As-Bi-Solutions in the Preparation of GaAs Structures for Mesfet Technology
Characterization of (Ga, In), (As, P)/InP-DHS by Means of IR-Microscopy, SEM Modes and Photoluminescence
On Cr Behaviour during the VPE Growth of GaAs Epitaxial Layers
Growth and Charactersization of GaAs Single Crystals with Low Dislocation Density
Some Problems of Thickness Determination of Active Layer in InP/GalnAsP Heterostructures with the Doping and/or Composition Profiling Method
Short Time Annealing of Ion Implanted GaAs
Characterization of (Ga, In)As/InP Epitaxial Structures
A New Method of Analysis of Solute Electromigration and Electrotransport in III-V Solutions
Coordinate Dependance of the Impact Ionization Coefficients of Holes and Electrons in a Variable-Gap p-n Structure
Chaotic Current Oscillations in Cr-Compensated GaAs
On the Electrical Properties of Semi-Insulating GaAs
DLTS, ODLTS and MCTS Study of Deep Traps in the VPE GaAs Schottky Barriers
On the Influence of Dislocations on GaAs1-xPx Graded Layers
Microwave Absorption Spectroscopy of Deep Levels in Semiconductors
Deep Levels in GaAs Prepared by VPE
Electron Paramagnetic Resonance of Electron-Irradiated GaAs
Optical Studies of Nickel Impurity in GaP
On a Temperature Activated Defect Reaction at the Isotype Al0.05Ga0.95As/Al0.35Ga0.65As Interface Grown by LPE
Fine Structure of EL2 Absorption in GaAs
Electron Irradiation Induced Structure in III-V Semiconductors Studied by Positron Lifetime Spectroscopy
Spatially Resolved Luminescence of LEC Grown GaAs Crystals by Automatic Laser Scanning
Universal Position-Changing Trend of 3d-Impurity Levels (0/+) and (0/-) in Semiconductors and Exciton Localization on 3d Impurities
Theory of Auger Recombination Involving Traps in A3B5 Semiconductors: Application to States with One and Two Bound Particles in GaSb
Rare Earth Impurity Luminescence in Gallium Arsenide And Gallium Phosphide
Metastability of EL2 Defects in GaAs
Investigation of Defects in Ion Implanted GaAs by Means of RBS and Optical Transmission Spectroscopy
Antistructure Defects in Neutron-Irradited GaAs - A Comparison with EL2 Defects in As-Grown Crystals
Luminescence of Manganese - Doped InGaAs and InAsSbP Alloys
The Nature of Excess Currents in GaAlSb(As) Diodes of "Resonant" Composition
Radiation Ordering Effects at GaAs Superfaces
Contact Resistance Profiling - An Effective Tool for Failure Analysis of GaAs-GaAlAs Layer Structures
Analysis of Non-Linear Light-Current Characteristics and Anomalous Pulse Responses of Semiconductor Lasers
Generation of Schottky Metal Pattern on GaAs by the Electron Beam Resist Liftoff Technique
I-V Pecularities in GaAs-CrAu Schottky and GaAs-Au Ion Mixed Contacts
PdGe Non-Alloyed Contact to n-GaAs
Study of High Sensitive GaAs Vertical Field-Effect Transistors
Thermal and Temperature Properties of 1.3 μm InGaAsP/InP Stripe Lasers
Modulation Properties of 1.3 μm Laser Diodes
Technology and Electrical Characterization of GaAs Mesfet Structures
Study of Dark Current in Ga1-xInxAs/GaAs Diodes
The Dependence of InGaAs Photodiode Characteristics on the Composition of the Ternary
On the Interaction of Au with GaP
Degradation Processes in Visible GaP and GaAsP LED's
Enhanced Diffusion of Zn along the SiO2Mask-GaAs Interface
Efficient Metallization Scheme for GaAs Microacoustic Devices
Some Properties of GaAs Schottky Barrier Photodetectors for 0,82 μm Wavelength Applications
Impedance of GaAs-GaAsP- and GaP-Electrolyte Interfaces in the 10 kHz - 100 kHz Frequency Range
GaAs Mesfet For S-Band Frequencies
(Cr)-(Pt)-(Au)-Metallization as an Ohmic Contact System of III-V Semiconductor Surfaces (GaAs, InP)
| Reihe/Serie | Retrospective Collection ; Volume 12 |
|---|---|
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 1000 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Technik ► Maschinenbau | |
| ISBN-10 | 0-87849-555-X / 087849555X |
| ISBN-13 | 978-0-87849-555-9 / 9780878495559 |
| Zustand | Neuware |
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