Defects in Semiconductors 19
Trans Tech Publications Ltd (Verlag)
978-0-87849-786-7 (ISBN)
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Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs
Optically-Induced Defects in Si-H Nanoparticles
Defects and Doping in III-V Nitrides
A Programme for the Future?
The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge
Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC
Localization of Nondegenerate Electrons at Random Potential of Charged Impurities
Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
Defects in SiGe
Acceptor States in Boron Doped SiGe Quantum Wells
Substitutional Carbon in Ge and Si1-xGex.
Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
Optical Investigation of Ge-Rich Ge1-xSix (0≤ x ≤ 0.1) Alloys
Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex
Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays
Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching
The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect
Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
Dislocation Activities in Bulk GeSi Crystals
Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS
Molecular-Dynamics Simulations of Microscopic Defects in Silicon
Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM
Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage
Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films
Hydrogen Molecules in Crystalline Silicon
Thermal Stability of Hydrogen Molecule in Crystalline Silicon
Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
IR Studies of Si-H Bond-Bending Vibrational Modes in Si
Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
Trapping Site of Hydrogen Molecule in Crystalline Silicon
Formation and Structure of Hydrogen Molecules in Crystalline Si
Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
The Trapping of Hydrogen at Carbon Defects in Silicon
The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
Interstitial Carbon-Hydrogen Defects in Silicon
Low-Temperature Migration of Hydrogen and Interaction with Oxygen
Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon
Vibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ Silicon
The I Centre: A Hydrogen Related Defect in Silicon
Theory of Gold-Hydrogen Complexes in Silicon
Electrically Active Silver-Hydrogen Complexes in Silicon
Palladium-Hydrogen Related Complexes in Silicon
Effects of Hydrogen Plasma on Dislocation Motion in Silicon
Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects
Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)
Metastable Defects and Recombination in Hydrogenated Amorphous Silicon
Tracing Diffusion by Laplace Deep-Level Spectroscopy
Defects in AS-Grown Silicon and their Evolution During Heat Treatments
An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering
Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon
The Oxygen Dimer in Silicon: Some Experimental Observations
Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
High-Field EPR Spectroscopy of Thermal Donors in Silicon
Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities
Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C
Local Vibrational Modes of Weakly Bound O-H Complexes in SI
Phonon Scattering in Heat-Treated Cz-Silicon
Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy
Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers
Electric-Dipole Spin Resonance of Be-Doped Silicon
Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
Iron in p-Type Silicon: A Comprehensive Model
Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at Isolde
Recombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in Si
Precipitation of Iron in FZ and CZ Silicon
The Orthorhombic FeIn Complex in Silicon
Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering
A Study of the Copper-Pair Related Centers in Silicon
The Photoluminescence of Pt-Implanted Silicon
Identification of the Si:Au and Si:Pt 1S3/2(Г8)+Г Phonon-Assisted Fano Resonance
Silver-Related Donor Defect in Silicon
Isolated Substitutional Silver and Silver-Induced Defects in Silicon: An Electron Paramagnetic Resonance Investigation
Pseudo or Deep Donor Excitation Spectra in Silicon
Vacancies and Interstitial Atoms in eֿ-Irradiated Silicon
Vacancy Aggregates in Silicon
Identification of VH in Silicon by EPR
Novel Luminescent Centres in Cadmium Doped Silicon
Defect Clusters in Silicon: Impact on the Performance of Large-Area Devices
Modeling of Self-Interstitial Clusters and their Formation Mechanism in Si
Self-Interstitials in Irradiated Silicon
High Resolution EELS Study of Extended Defects in Silicon
Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment
Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon
Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
Fano Resonance in a Vibronic Sideband in Silicon
Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures
Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon
Luminescence Centers in High-Energy Ion-Implanted Silicon
Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He4 Irradiation
Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H
Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon
Implantation of Reactive and Unreactive Ions in Silicon
Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon
Raman Scattering Measurements in Neutron-Irradiated Silicon
Recombination Centers in Electron Irradiated Si and GaAs
Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li
The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions
Structural Change and Relaxation Processes of Tetrahedral Point Defects
The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C
Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions
Characterisation of Recombination Centres in Solar Cells by DLTS
Defect-Engineering Rad-Hard Detectors for the CERN LHC
Theory of 3d Transition Metal Defects in 3C-SiC
A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC
Optical Absorption and Zeeman Study of 6H-SiC:Cr
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
Gas and Heat Treatment Effects on the Defect Structure of a-SiC:H Films
Capacitance Spectroscopy of Deep Centres in SiC
Native and Electron Irradiation Induced Defects in 6H-SiC
Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation
Vacancy-Type Defects in Proton-Irradiated SiC
Theoretical Studies on Defects in SiC
Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films
Hydrogen and Hydrogen-Like Defects in Diamond
Fine Structure of the Boron Bound Exciton in Diamond
Investigation of Ion-Implanted Boron in Diamond
Isotopic Shifts of the N3 Optical Transition in Diamond
Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
A First Principles Study of Interstitial Si in Diamond
Radiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and α Particles
Study of Defects in Diamond Films by Electrical Measurements
Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation
Intrinsic Modulation Doping in InP-Based Heterostructures
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
Study of Iron-Related Defects in SI-InP by Positron Annihilation Spectroscopy
Homogeneity of Fe-Doped InP Wafers Using Optical Microprobes
Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation
A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide
Alpha Radiation-Induced Deep Levels in p-InP
Site Stability, Diffusion, and Charge Dynamics for Muonium in GaAs
Structure and Reorientation of the SiAs-H and ZnGa-H Complexes in Gallium Arsenide
Ab Initio Study of the CAs Local Oscillator in Gallium Arsenide
Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide
Atomic Configuration of Oxygen Negative-U Center in GaAs
Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers
Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs
Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide
Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation
Spectroscopic Investigation of Neutral Niobium in GaAs
Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs
Arsenic Interstitial Pairs in GaAs
Electrical Properties of Low Temperature Grown GaAs
Traps Found in GaAs MESFETs: Properties Location and Detection
Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors
Creation of GaAs Antisites in GaAs by Transmutation of Radioactive 71AsAs to Stable 71GaAs
Defect Control in As-Rich GaAs
As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
Electrically Detected Magnetic Resonance at Different Microwave Frequencies
Metastable Antisite Pair in GaAs
Theoretical Study of Antistructure Defects in GaAs
Study of Plastically Deformed Semiconductors by Means of Positron Annihilation
The Micro Structure of the EL2 Defect in GaAs - A Different Look to Former Spin Resonance Data
Detection and Identification of the EL2 Metastable in GaAs
Defects in Thick Epitaxial GaAs Layers
Effects of Copper Diffusion on the Native Defect EL2 in GaAs
EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs
Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance
ODMR Investigation of Proton Irradiated GaAs
Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs
Defects in Neutron Irradiated, LEC Semi-Insulating GaAs
Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
Metastable Charge Recovery in Plasma-Irradiated η-GaAs
Metastable Amorphous Structure in Ion Implanted GaAs
Theory of Nitrogen-Hydrogen Complexes in GaP
Photoluminescence, Optical Absorption, and EPR Studies of the Co2+-SP Pair Defect in GaP
Resonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaP
GaN Grown Using Trimethylgallium and Triethylgallium
ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN
Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation
Implantation Doping and Hydrogen Passivation of GaN
Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs
Donor-Acceptor Pair Transitions in GaN
AB Initio Studies of Atomic-Scale Defects in GaN and AlN
Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers
Zeeman Study of the 0.9 eV Emission in AlN and GaN
A First-Principles Study of Mg-Related Defects in GaN
Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
GaN Doped with Sulfur
Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals
Local Vibrational Modes at AsN in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model
A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations
Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN
Raman Scattering from Defects in GaN
Structural and Electrical Properties of Threading Dislocations in GaN
Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates
Irradiation Induced Lattice Defects in In0.53Ga0.47As Pin Photodiodes
Acceptor-Hydrogen Interaction in InAs
Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
Effect of Neutron Irradiation on Ga-Based Semiconductors
Polaron Coupling for Sulphur Impurity in GaSb
Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb
Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter
Transition from Tunneling to Poole-Frenkel Type Transport in Aluminum-Nitride
Growth Surface Dependence of Cathodoluminescence of Cubic Boron Nitride
N-Vacancy Defects in c-BN and w-BN
Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field
Long-Range Lattice Relaxation for Donor Centers in Supercell Method
Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAs
Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs
Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type AlxGa1-xAs
Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance
ODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6As
Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
Degradation in II-VI Laser Diodes
Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy
Defect Structures in Heavily In-Doped II-VI Semiconductors
The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS
Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe
Nature of Dislocation-Related Deep Level Defects in CdS
NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:MIII
Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence
Observation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSe
Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE
Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron
Determination of the Lattice Site of Nitrogen after Implantation into ZnSe
Charge Transfer at Ti Ions in ZnTe
Bistable Centers in CdMnTeSe:In and CdMnTe:Ga Crystals Studied by Light-Induced Gratings
Deep Levels in Cd0.99Mn0.01Te:Ga
Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds
UV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap Materials
Lattice Relaxation of In Donors in CdF2
Shallow Electron Centres in CdF2:M3+ and Silver Halides
EPR Investigation of Metastable Donor States in CdF2:In, Ga
Photoinduced Magnetism in CdF2 with Bistable Donors: The Clue for the Negative U?
Evidence of Metastable Deep Acceptors in AgGaS2 from Time-Resolved Emission
A Positron Lifetime Study of Lattice Defects in Chalcopyrite Semiconductors
Magnetooptical Characterization of CuIn(Ga)Se2
Defects Spectroscopy in ß-Ga2O3
Bistability of Oxygen Vacancy in Silicon Dioxide
Energy Transfer Processes at Erbium Ions in Silicon
Energy Transfer Rate Between Erbium 4ƒ Shell and Si Host
Photoluminescence Study of Erbium in Silicon with a Free-Electron Laser
Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
Photo- and Electroluminescence of Erbium-Doped Silicon
Donor Centers in Er-Implanted Silicon
Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon
Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
High Temperature Luminescence Due to Er in Porous Si
Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
Erbium Related Defects in Gallium Arsenide
Electron Spin Resonance of Er-Oxygen Complexes in GaAs
Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure
EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping
Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping
Er-Luminescence in MBE-Grown AlGaAs
Crystal-Field Transitions of Nd3+ and Er3+ in Perovskite-Type Crystals
Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices
Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures
Infrared Induced Emission From Silicon Quantum Wires
Acceptor States in Boron Doped SiGe Quantum Wells
Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures
Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications
The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.
Deep Hole Traps in Be-Doped Al0.5Ga0.5 As MBE Layers
Nanotubes and Pinholes in GaN and their Formation Mechanism
Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs
Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy
Auger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal Ions
Spin-Dependent Processes in Self-Assembly Impurity Quantum Wires
Comparison between AS-Grown and Annealed Quantum Dots Morphology
EPR Studies of Magnetic Superlattices
Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
Ground and Excited States of Dˉ Centres in Semiconductor Quantum Dots
Electron Spin Resonance Features of the Pb1 Interface Defect in Thermal (100)Si/SiO2
Silicon Surface Defects: The Roles of Passivation and Surface Contamination
Heat-Treatment Induced Modifications of Porous Silicon
Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation
Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM
Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon
Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon
Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon
Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon
Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP
Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide
Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs
Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs
Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors
Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
| Reihe/Serie | Materials Science Forum ; Volumes 258-263 |
|---|---|
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 4440 g |
| Einbandart | kartoniert |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 0-87849-786-2 / 0878497862 |
| ISBN-13 | 978-0-87849-786-7 / 9780878497867 |
| Zustand | Neuware |
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