Defects in Semiconductors 14
Trans Tech Publications Ltd (Verlag)
978-0-87849-551-1 (ISBN)
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Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology
Hot Topics: Theory
AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors
Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities
Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods
Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
Tight-Binding Study of the Silicon Divacancy
Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe
Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors
Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials
Effects of Doping and Alloying on Native Defects and Complex Formation in Hg1-x CdxTe
The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide
Defect Calculations in a Modified Haldane-Anderson Model
Electronic Structure of Neutral Complex Defects in Silicon
High Temperature Investigations of Silicon by Means of Positron Annihilation
Theoretical Determination of the Vacancy Migration Energy in Silicon
Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
Germanium Impurity Diffusion in Boron Doped Silicon
Diffusion of Tellurium in Silicon
Behaviour of Substitutional Gold in Silicon
Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
Migration of Interstitial Boron in Silicon
Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C
Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium
An Overview of Electron Paramagnetic Resonance Studies of Si-SiO2 Interface States
Manganese Luminescence in GaAs/GaAlAs Superlattices
Capacitance and Current Spectroscopy of Perpendicular Transport in Compensated GaAs-GaAlAs Superlattices
Characterization of Electron Traps in GaAs-GaAlAs Superlattices
Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE
Atomic Imaging of Surface Defects on Si
Influence of Strain on Silicon Surface and Silicon Oxide Interface Reconstruction
Deep Level at Semiconductor Surfaces
Charged Defect States at Silicon Grain Boundaries
Bulk and Grain Boundary Defects in Polycrystalline ZnO
The Role of Defect Production at Surface and Interface of CdHgTe and ZnHgTe
Electronic Structure of As and P Antisite Defects and Ga Vacancy in GaP and GaAs
EPR Spectra of AsGa Aggregates in GaAs
Endor-Investigation of the Ga Vacancy in GaP
Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation
Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
Electronic Structure and Positron States at Vacancies in Semiconductors
Search for the Full Atomic Structure of El2 in GaAs
Bistability and Metastability of VGa in GaAs
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
A Model for the Atomic Configuration of the EL2 Defect in GaAs
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
The Energy Position of the EL2 Ground State in GaAs
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
Resonant Raman Scattering at Point Defects in GaAs
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
ESR Studies of Semi-Insulating GaAs Crystals
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
Introduction to Metastability: Configuration Coordinate Diagrams
Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
Metastable States of the DX Center in AlxGa1-xAs
Environmental Effects in DX (Te) Centers in GaAlAs
Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
The Ge-Related DX Level in Sn/Ge-Doped AlxGa1-xAs Hetero-Junctions Grown by LPE
A New Model of Deep Donor Centers in AlxGa1-xAs
Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
Multiphonon Recombination by Bourgoin-Corbett Mechanism
Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon
On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξμ
Cathodoluminescence Contrast from Localized Defects in Semiconductors
A Study of Electron Capture Cross Sections of A-Center and Gold Acceptor in Silicon under Uniaxial Stress
Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice
Zero-Phonon Line of Deep-Level Luminescence in GaAs
Accurate Determination of Capture Time Constant of Interface States in MOS Structures
Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors
Constant Photo-EPR: A New Method for Deep Level Characterization
Characterization of Deep Levels by Microwave Absorption Spectroscopy
Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs0.6P0.4
Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon
On the Formation of 111In-Donor Atom Pairs in Silicon as Observed by PAC
Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method
Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon
Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon
Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs
Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon
Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere
The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
Transition-Metal Luminescence in III-V Alloys
The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR
Identification of the Co1+ Double Acceptor State in GaAs
Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements
Vanadium in GaAs and GaP
Properties of Titanium in GaAs and InP
Study of Transition Metal Deep Donor Levels in InP
The Donor Level Ti3+/Ti4+ in InP: Electrical and Optical Properties
Study of the Cr 2+ Luminescence in GaAs as a Function of Hydrostatic Pressure
Optical, Electrical and EPR Studies of GaAs:Ni
The Luminescence at 0.844 eV in GaAs:Cr - A Zeeman Spectroscopy
Optical Detection of Magnetic Resonance in the Optically Excited 2F5/2-State of Yb3+ in InP
On the Evidence for the Effect of Local Symmetry on the Photoionization Spectrum of Fe2+ in InP
Non-Stationary Infrared-Optical Processes Involving Deep Impurities in III-V Compound Semiconductors
Optically-Detected Magnetic Resonance of Gold Centres in Zinc Selenide
Structure of Pd, Pt and Au Impurities in Silicon: The Energy Levels under Uniaxial Stress and Hydrostatic Pressure
Interstitial 3d Transition Metal Impurities in Silicon: An Ab Initio Cluster Study
Photoluminescence Studies on Gallium-Related Deffects in Silicon
Identification of the Energy Levels of Si:Pd by DLTS
Electrons of 3d Transition Metals in Silicon
High Resolution Transmission Electron Microscopy of Semiconductors and Their Defects
Classification of Defects in Plastically Deformed Silicon
The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon
The Role of Point Defects in the Nucleation of Film Edge Induced Dislocations in Silicon
Structural Features in the Photoluminescence from Widely Dissociated Straight Partial Dislocations in Silicon
Defect-Related Luminescence in Molecular Beam Epitaxy Grown CdTe Films*
Structure of Dislocations in Plastically-Deformed, High Purity GaAs
Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping
The Electrical Activity of Dislocation Slip Planes in Semiconductor Crystals
TEM Observation of Dislocations in In Doped GaAs after High Temperature Plastic Deformation
Dislocations in Plastically Deformed GaAs:Cr Thermal Conductivity Measurements
Glide of α and β Dislocations in GaAs
Plasticity of Cd0.66 Hg0.34 Te TEM Observations of Dislocations
Dangling Bonds in a Dislocation Core in Ge. Do They Exist?
On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs
ODMR Observation of Close Frenkel Pairs in Electron-Irradiated ZnSe
Electrical Compensation, Electron and Hole Traps in Electron Irradiated ZnSe
Radiation Damage Experiments with ZnO at Low Temperatures
Saturation Spectroscopy and Fluorescence in ZnO:Co2+
ODMR-MCD Study of the Zinc Vacancy and Related Complexes in ZnSe
Photoluminescence Spectroscopy of Proton Implantation Induced Defects in CdTe and ZnTe
Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO2
On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon
The Electronic Structure of the Oxygen-Vacancy Complex in Silicon
Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon
Enhanced Oxygen Diffusion in Silicon at Low Temperatures
The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon
N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon
Chalcogen Double Donors in Silicon
The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond
The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds
Electronic and Vibrational Absorption of Interstitial Carbon in Silicon
Ion-Implanted Oxygen Isotopes in Silicon
Far-IR Spectroscopy of Oxygen Donors in Germanium
Identification of the Carbon Associated Radiation Damage Levels in Silicon
Thermal Donors in Silicon - 1986
Preferential Alignment of Thermal Donors in Si
Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon
Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates
Early Stage of the New Donors Formation in Cz-Silicon
Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
Oxygen Endor of Thermal Donors in Silicon
A Model for the Density of Oxidation Induced Stacking Faults in Silicon
Enhanced Oxygen Diffusion in Silicon at Thermal Donor Formation Temperature
Radiative Defects in Electron Irradiated InP
Thermal Transformation of the Electron-Irradiation-Induced Defect H4 in p Type InP
Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet
Electron Microscope Observation of Highly Disordered Regions in Neutron Irradiated Germanium
Climbing of Nearly Screw Dislocations in InSb Thin Foils Irradiated in a High Voltage Electron Microscope
Comparison of Electron Paramagnetic Resonance and Transport Data during Thermal Recovery of Fast Neutron Irradiated GaAs
Endor Study of Radiation Induced Defects in Semi-Insulating GaP
Low Temperature Electron Irradiation Induced Defects in N-GaSb
Electron Hopping between Bombardment Induced Defects in Gallium Arsenide
Ga Antisite Defects in Neutron Irradiated and Annealed GaAs?
Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon
Cu-Related Deep Levels in Si and the Interaction between Cu and Irradiation Defects
Subthreshold Radiation Damage in Silicon: Carbon Isotope Measurements on Cs-SiI-Cs Complexes
Experimental Study of Divacancy in Silicon
New Impurity-Defect Reactions in Silicon
Photoluminescence Study of Fe2+ in InP1-xAsx:Fe Alloys
Electron Microscopy Data for Threshold Energy of Point Defect Creation in Silicon
Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si
Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation
Defects Related to Nitrogen Implantation in Silicon Single Crystals
Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study
Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation
Investigation of the Lattice Defects in P Ion Implanted Silicon
Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium
Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
As-Implanted Lattice Sites of Dopants in Semiconductors
Defect Structures in Ion-Implanted InSb
Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond
Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy
Study of Deep Levels in AlyGaxIn1-x-y P Material Grown by Movpe
Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs
Donor Identification in Bulk Gallium Arsenide
Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs
Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs
Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals
Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg1-x CdxTe by Positron Annihilation
Native Defects in β-Sic
Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon
Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous
Radiative Recombination Mechanism of Deep Levels in GaAs
| Reihe/Serie | Materials Science Forum ; Volumes 10-12 |
|---|---|
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 3040 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Technik ► Maschinenbau | |
| ISBN-10 | 0-87849-551-7 / 0878495517 |
| ISBN-13 | 978-0-87849-551-1 / 9780878495511 |
| Zustand | Neuware |
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