Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip

Pascal Meinerzhagen, Adam Teman, Robert Giterman, Noa Edri, Andreas Burg, Alexander Fish (Autoren)

Buch | Softcover

IX, 146 Seiten

2018 | 1. Softcover reprint of the original 1st ed. 2018
Springer International Publishing (Verlag)
978-3-319-86855-4 (ISBN)

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This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.

Dr. Pascal Meinerzhagen is a Senior Research Scientist at Intel Labs, Intel Corporation, performing research into energy-efficient, error-resilient circuits and systems in high-performance FinFET CMOS technology. Dr. Adam Teman is a tenure track Senior Lecturer and co-director of the Emerging NanoScaled Integrated Circuits and Systems (EnICS) Labs in the Faculty of Engineering at Bar-Ilan Univeristy. His research interests include energy-efficient digital circuit design with an emphasis on embedded memories and efficient physical implementation of VLSI systems.

Motivation.- Introduction to Gain-Cell Based eDRAMs (GC-eDRAMs).- GC-eDRAMs Operated at Scaled Supply Voltages.- Near- V T GC-eDRAM Implementations with Extended Retention Times.- Aggressive Technology and Voltage Scaling (to Sub- V T Domain).- Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications.- 4T Gain-Cell with Internal-Feedback for Ultra-Low Retention Power at Scaled CMOS Nodes.- Multilevel GC-eDRAM (MLGC-eDRAM).- Soft Error Tolerant Low Power 4T Gain-Cell Array with Multi-Bit Error Detection and Correction.- Conclusions.

Erscheinungsdatum	05.03.2022
Zusatzinfo	IX, 146 p. 84 illus. in color.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	2467 g
Themenwelt	Mathematik / Informatik ► Informatik ► Theorie / Studium
	Informatik ► Weitere Themen ► Hardware
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	embedded DRAM memory • Embedded Memory Design • error-tolerant embedded memory • Memory for VLSI • memory optimization • memory systems
ISBN-10	3-319-86855-1 / 3319868551
ISBN-13	978-3-319-86855-4 / 9783319868554
Zustand	Neuware