Emerging Resistive Switching Memories
Seiten
2016
|
1st ed. 2016
Springer International Publishing (Verlag)
978-3-319-31570-6 (ISBN)
Springer International Publishing (Verlag)
978-3-319-31570-6 (ISBN)
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.
Introduction to history of memory devices and the present memory devices.- Introduction of resistive switches memory devices with nanoparticles.- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode.- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode.- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles.- Mechanisms for resistive switches.- Application of the resistive switching devices with nanoparticles.
| Erscheinungsdatum | 08.10.2016 |
|---|---|
| Reihe/Serie | SpringerBriefs in Materials |
| Zusatzinfo | VIII, 93 p. 73 illus., 41 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Informatik ► Weitere Themen ► Hardware |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| Schlagworte | Bistable devices • Charge trapping • Chemistry and Materials Science • Electronic Circuits and Devices • Electronics and Microelectronics, Instrumentation • Fabrication of novel non-vole. rest. random-access • Fabrication of novel non-vole. rest. random-access mem. • Memory device nanoparticles • Memory Structures • Memristor Devices • nanotechnology • Neuromorphic memories • Nonvolatile memories • Resistive Switching • RRAM • transition metal oxide |
| ISBN-10 | 3-319-31570-6 / 3319315706 |
| ISBN-13 | 978-3-319-31570-6 / 9783319315706 |
| Zustand | Neuware |
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