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Nanoscale Memory Repair

Masashi Horiguchi, Kiyoo Itoh (Autoren)

Buch | Hardcover

218 Seiten

2011
Springer-Verlag New York Inc.
978-1-4419-7957-5 (ISBN)

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Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.

An Introduction to Repair Techniques: Basics of Redundancy.- Basics of Error Checking and Correction.- Comparison between Redundancy and ECC.- Repairs of Logic Circuits.- Redundancy: Models of Fault Distribution.- Yield Improvement through Redundancy.- Replacement Schemes.- Intra-Subarray Replacement.- Inter-Subarray Replacement.- Subarray Replacement.- Devices for Storing Addresses.- Testing for Redundancy.- Error Checking and Correction: Linear Algebra and Linear Codes.- Galois Field.- Error-Correcting Codes.- Coding and Decoding Circuits.- Theoretical Reduction in Soft-Error and Hard-Error Rates.- Application of ECC.- Testing for ECC.- Synergistic Effect of Redundancy and ECC: Repair of Bit Faults using Synergistic Effect.- Application of Synergistic Effect.

Erscheint lt. Verlag	13.1.2011
Reihe/Serie	Series on Integrated Circuits and Systems
Zusatzinfo	X, 218 p.
Verlagsort	New York, NY
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Informatik ► Weitere Themen ► CAD-Programme
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	1-4419-7957-3 / 1441979573
ISBN-13	978-1-4419-7957-5 / 9781441979575
Zustand	Neuware