Optoelectronic Devices: III Nitrides

Mohamed Henini, M Razeghi (Autoren)

Buch | Hardcover

592 Seiten

2004
Elsevier Science Ltd (Verlag)
978-0-08-044426-0 (ISBN)

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III-V Nitrides have potential usage in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a number of optoelectronic applications of III-V nitrides and covers the process from growth to devices and applications. It is useful for those working in the semiconductors or microelectronics.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.

The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.

This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Erscheint lt. Verlag	17.12.2004
Verlagsort	Oxford
Sprache	englisch
Maße	165 x 240 mm
Gewicht	1210 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	0-08-044426-1 / 0080444261
ISBN-13	978-0-08-044426-0 / 9780080444260
Zustand	Neuware