Tantalum and Niobium-Based Capacitors
Springer International Publishing (Verlag)
978-3-030-89516-7 (ISBN)
This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc.
Since the publication of the 1st edition, principally important new results on the impact of technology on the reliability, failure mode, volumetric efficiency, and environmental stability of Solid Electrolytic and Polymer Tantalum capacitors, which dominate the market, were obtained. Based on these results, new possibilities for the reliable mission critical applications of the surface mount tantalum capacitors manufactured with advanced technologies were demonstrated. These new results added to the 2nd edition not only significantly expand the scope of the book, but also provide important corrections and clarity to the earlier published material.
Yuri Freeman received his master’s degree as engineer-physicist from the renowned school of Thin Solid Films at the Kharkiv Polytechnic Institute in Ukraine. He graduated among the first in his class and hoped to continue his work in academia. However, as it was still Soviet Union times and graduates were “distributed” often contrary to their choices, Yuri was sent to work for SCB ELITAN, a developer and producer of tantalum capacitors. At first Yuri thought sadly: “What could be more primitive than a capacitor with two plates separated by a dielectric?” He realized only later that his random assignment was an incredible opportunity for a scientist and an engineer! The change started with his involvement in the development of niobium capacitors to substitute tantalum capacitors, enforced by a shortage in tantalum in former Soviet Union. Comparison of the degradation mechanisms in tantalum and niobium capacitors became the topic of his Ph.D. in solid-state physics. Shortly after the collapse of the Soviet Union, SCB ELITAN was closed and Yuri started his work for Sprague-Electric later Vishay-Sprague, the original manufacturer of solid tantalum capacitors. After several years with Vishay Sprague, where Yuri was promoted to principal scientist, his facility in Sanford, Maine, USA, was closed, and manufacturing moved overseas. While Yuri was looking for a new job, his Siberia-born wife fell in love with sunny South Carolina, and that’s how Yuri ended up at KEMET Electronics, a global producer of tantalum capacitors. This turned out to become the best part of his career with the most challenging projects and the industry’s best team to work with. Now, Yuri is a Fellow/VP, director of strategic development in tantalum at KEMET Electronics. As an adjunct professor, he is also teaching science and technology of the electronic components at the Clemson University. In 2018, the Tantalum and Niobium International Study Center (TIC) awarded Yuri Freeman the Ekeberg Prize for the “outstanding contribution to the advancement of the knowledge and the understanding of the metallic elements tantalum and niobium”
Introduction.- 1: Major Degradation Mechanisms.- 2: Basic Technology.- 3: Applications.- 4: Conclusion.
| Erscheinungsdatum | 16.12.2022 |
|---|---|
| Zusatzinfo | XXI, 149 p. 119 illus., 50 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 270 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | amorphous Ta2O5 thin films • Capacitor Technology • Materials Research for Manufacturing • metal-insulator-semiconductor • MOSFET transistors |
| ISBN-10 | 3-030-89516-5 / 3030895165 |
| ISBN-13 | 978-3-030-89516-7 / 9783030895167 |
| Zustand | Neuware |
| Haben Sie eine Frage zum Produkt? |
aus dem Bereich
