Angle-Resolved Photoemission Spectroscopy Studies of 2D Material Heterostructures (eBook)

Eryin Wang (Autor)

eBook Download: PDF

2019 | 1st ed. 2020
XIV, 79 Seiten
Springer Singapore (Verlag)
978-981-15-1447-0 (ISBN)

Infos

This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large 'family'. As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure's electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in the area of condensed matter physics and materials science.

Eryin Wang received his PHD in physics from Tsinghua University. During PHD, he utilized angle-resolved photoemission spectroscopy (ARPES) and nanospot ARPES to study the novel interfacial phenomena in 2D material heterostructures, including Bi2Se3/BSCCO and Graphene/h-BN. Now he is working in Max Planck Institute for the Structure and Dynamics of Matter as a receiver of Humboldt Research Fellowship. Currently, he is combining ultrafast transport and molecular beam epitaxy techniques to investigate the light-induced superconductivity in organic superconductor. 

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This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large "e;family"e;. As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure's electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in thearea of condensed matter physics and materials science.

Inhalt

Declaration 6
Supervisor’s Foreword 7
Abstract 9
Acknowledgements 11
Contents 13
1 Introduction 15
1.1 Family of Two-Dimensional Materials 15
1.1.1 Graphene-Like 2D Sheets 15
1.1.2 Transistion Metal Dichalcogenides 17
1.1.3 Toplogical Insulator 19
1.2 2D Material Heterostructures 20
1.2.1 Moiré Superlattice Potential Modulation 22
1.2.2 Interlayer Electron–Electron Interaction 24
1.2.3 Interlayer Electron–Phonon Interaction 26
1.2.4 Proximity Effect 26
References 29
2 Experimental Techniques 32
2.1 Angle-Resolved Photoemission Spectroscopy (ARPES) 32
2.1.1 General Description 32
2.1.2 The Three-Step and One-Step Model 35
2.1.3 Single Particle Spectral Functions 37
2.1.4 State-of-the-Art Photoemission 39
2.2 Development of Nanospot Angle-Resolved Photoemission … 41
References 43
3 Band Engineering in van der Waals Heterostructures Graphene/h-BN 44
3.1 Introduction 44
3.2 Epitaxial Graphene/h-BN Heterostructure with 0° Stacking Angle 46
3.2.1 Second-Generation Dirac Cones in Epitaxial Graphene/h-BN 47
3.2.2 Gap Induced by Inversion Symmetry Breaking in Epitaxial Graphene/h-BN 48
3.2.3 Discussion 52
3.3 Transferred Graphene/h-BN Heterostructure with Non-zero Stacking Angles 54
3.3.1 Band Structure Modulation in Transferred Graphene/h-BN 56
3.3.2 Discussion 62
References 63
4 Simpler van der Waals Heterostructure-Twisted Bilayer Graphene 65
4.1 Introduction 65
4.2 Potential Modulation in Twisted Bilayer Graphene 66
4.3 Second-Generation Dirac Point in Twisted Bilayer Graphene 70
4.4 Discussion 72
References 73
5 Proximity Effect Between Topological Insulator and D-Wave Superconductors 75
5.1 Introduction 75
5.2 Proximity-Induced Gap on Surface States of Bi2Se3 76
5.3 Symmetry of the Proximity-Induced Gap 82
5.4 Discussion 83
References 85
6 Conclusion 87
Appendix Resume 88
Education 88
Honors and Awards 88
Research Experience 88
Publications 89
Invited Talks and Seminars 89
Contributed Talks 90

Produkt-Details

• Erscheint lt. Verlag: 5.12.2019
• Reihe/Serie: Springer Theses
• Reihe/Serie: Springer Theses
• Zusatzinfo: XIV, 79 p. 55 illus., 51 illus. in color.
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie ► Analytische Chemie
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: High-temperature Superconductor • Topological Insulator • twisted bilayer grapheme • two-dimensional heterostructure • van der Waals heterostructures
• ISBN-10: 981-15-1447-X / 981151447X
• ISBN-13: 978-981-15-1447-0 / 9789811514470