Silicon Epitaxy (eBook)

Danilo Crippa, Daniel L. Rode (Herausgeber)

eBook Download: PDF

2001 | 1. Auflage
491 Seiten
Elsevier Science (Verlag)
978-0-08-054100-6 (ISBN)

Infos

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Inhalt

Front Cover 1
Silicon Epitaxy: Semiconductors and Semimetals 4
Copyright Page 5
Contents 8
Preface 16
List of Contributors 20
Chapter 1. CVD Technologies For Silicon: A Quick Survey 22
Abbreviations Used 23
I. Introduction 24
II. Bulk Polycrystalline Silicon Processes 28
III. Film Deposition: Reactors 31
IV. Film Deposition: Products and Chemistries 58
V. Aerosol CVD 62
VI. Conclusions 70
References 71
Chapter 2. Epitaxial Growth Theory: Vapor-phase and Surface Chemistry 72
I. Introduction 72
II. Development of a Detailed Kinetic Scheme 73
III. Gas-phase Kinetics for Silanes and Chlorosilanes 77
IV. Surface Kinetics for Silanes and Chlorosilanes 92
V. Gas-phase Precursors to Deposition and Overall Kinetic Scheme 101
VI. Overall Kinetic Scheme and Concluding Remarks 105
References 107
Chapter 3. Epitaxial Growth Facilities, Equipment, and Supplies 110
Abbreviations Used 111
I. Introduction 111
II. The Epitaxial Reactor 112
III. Facilities 121
IV. Process Gas and Delivery 125
V. Exhaust Treatment 129
VI. Equipment for Power Epitaxy 132
VII. Advanced Applications 144
VIII. Conclusion 145
References 146
Chapter 4. Epitaxial Growth Techniques: Low-temperature Epitaxy 148
Abbreviations Used 148
I. Introduction 149
II. CVD Machines 149
III. Surface Treatment 154
IV. Epitaxial Growth Mechanisms 156
V. High-quality Si/Si1-x Gex/Si Heterostructure Growth at High Ge Fractions 164
VI. Conclusions 168
References 169
Chapter 5. Epitaxial Growth Techniques: Molecular Beam Epitaxy 172
Abbreviations Used 172
I. Introduction 173
II. MBE Machines 174
III. Surface Treatment 176
IV. Growth Mechanisms 178
V. Doping 183
VI. Growth of SiGe(C) Alloys 187
VII. Formation of Si/Ge Heterostructures 190
VIII. Growth of SiGe Buffer Layers 195
IX. Selective Growth 196
X. Formation of Superlattices, Quantum Wires, and Quantum Dots 198
XI. Conclusion 202
References 203
Chapter 6. Epitaxial Growth Modeling 206
Nomenclature 206
I. Introduction 208
II. Detailed Modeling of Epitaxial Reactors 214
III. Reduced-order Models for Epitaxial Silicon Deposition 230
IV. Atomistic Aspects: Control of Crystal Morphology 236
V. Summary 241
References 241
Chapter 7. Epitaxiai Layer Characterization and Metrology 246
Abbreviations Used 247
I. Introduction 247
II. On Sampling and Accuracy 250
III. Doping Control 256
IV. Thickness Measurements 269
V. Contamination and Surface Quality 276
VI. Future Developments and Conclusions 291
References 293
Chapter 8. Epitaxy for Discrete and Power Devices 298
Nomenclature 298
I. Introduction 299
II. General Considerations 301
III. Specific Epitaxy Processes for Power and Discrete Devices 304
IV. Defects and Problems 311
V. Accessory Considerations 313
Chapter 9. Epitaxy on Patterned Wafers 316
I. Introduction 316
II. Device Requirements and Process Complexity 321
III. Surface Preparation: Pre-epitaxial Cleaning 327
IV. Geometrical Pattern Integrity 329
V. Doping Pattern Integrity 337
VI. Crystal Defectivity 348
VII. Conclusion: The Best Epitaxial Recipe? 364
Bibliography 364
Chapter 10. Si-based Alloys: SiGe and SiGe:C 366
I. Introduction 366
II. Applications of Si Alloys 370
III. Low-temperature Surface Preparation 383
IV. Process Chemistry for Si Alloy Deposition 391
V. Metrology of Si1-x Gex Layers 407
VI. Production Robust Si1-x Gex Processing 410
VII. Summary 414
References 415
Chapter 11. Silicon Epitaxy: New Applications 418
I. Introduction 418
II. Equipment: State of the Art 419
III. Epitaxy Processes 427
IV. New Applications 443
V. Conclusion 474
References 476
Index 480
Contents of Volumes In This Series 492
Color Plate Section 514

Produkt-Details

• Erscheint lt. Verlag: 26.9.2001
• Mitarbeit: Herausgeber (Serie): J. A. Rossi, Eicke R. Weber, R. K. Willardson
• Sprache: englisch
• Themenwelt: Schulbuch / Wörterbuch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-054100-3 / 0080541003
• ISBN-13: 978-0-08-054100-6 / 9780080541006