Semi-insulating Iii-v Materials - Proceedings Of The 8th Conference
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-2008-2 (ISBN)
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This conference reviewed recent progress in materials science, physics, device technology and crystal growth of semi-insulating III-V semiconductors. A special session was devoted to growth and characterization of GaN — a prospective material for opto-electronics.The proceedings include invited talks given by several distinguished researchers in the field of III-V semiconductors.
MOCVD of semi-insulating and high-purity III-V materials, H. Jurgensen; preparation and characterization of S.I. InP with low Fe-content by wafer annealing, G. Hirt et al; electrical properties of undoped InP crystals, A. Hruban et al; annealing of GaAs grown by vertical zone melting, P.E.R. Nordquist et al; P-type GaN formed via ion-implantation, diffusion or co-evaporation of Mg, N. Newman et al; Zn-related luminescence in GaN bulk crystal - pressure and temperature study, H. Teisseyre et al; the dependence of epitaxial layer quality on bulk and surface properties of GaAs substrates, W. Jantz; relation between EL2 metastable behavior and photosensitive centres in SI-GaAs, S.Y. Song et al; semi-insulating GaAs - Cu, B.H. Yang et al; prospects of LT GaAs for device applications, G.L. Witt. (Part Contents).
| Erscheint lt. Verlag | 1.1.1995 |
|---|---|
| Verlagsort | Singapore |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Maschinenbau | |
| ISBN-10 | 981-02-2008-1 / 9810220081 |
| ISBN-13 | 978-981-02-2008-2 / 9789810220082 |
| Zustand | Neuware |
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