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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization -

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Buch | Hardcover
316 Seiten
1997
Academic Press Inc (Verlag)
978-0-12-752146-6 (ISBN)
CHF 279,30 inkl. MwSt
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Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany

Optical Characterization M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing

Thermal Wave Analyses C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors

Quantum Well Structures and Compound Systems R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors

Erscheint lt. Verlag 12.6.1997
Reihe/Serie Semiconductors and Semimetals
Mitarbeit Herausgeber (Serie): R. K. Willardson, Eicke R. Weber
Verlagsort San Diego
Sprache englisch
Maße 152 x 229 mm
Gewicht 620 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Naturwissenschaften Physik / Astronomie Festkörperphysik
ISBN-10 0-12-752146-1 / 0127521461
ISBN-13 978-0-12-752146-6 / 9780127521466
Zustand Neuware
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