Integrated Electronics on Aluminum Nitride

Materials and Devices

Reet Chaudhuri (Autor)

Buch | Softcover

XVI, 255 Seiten

2023 | 1st ed. 2022
Springer International Publishing (Verlag)
978-3-031-17201-4 (ISBN)

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This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Dr. Reet Chaudhuri is a Logic Device Engineer at the Intel Corporation, where he uses semiconductor device physics for developing next-generation semiconductor transistors to keep Moore's Law alive. Reet earned his Ph.D. in 2021 in semiconductor device physics at Cornell University, USA under the guidance of Prof Debdeep Jena, working at the intersection of solid-state physics, electronics and materials science. His doctoral research work focused on enabling integrated high-frequency electronics on the aluminum nitride (AlN) platform through careful material growth and electronic device development. His scientific discovery of the long-missing undoped mobile holes in gallium nitride in 2019 led to new insights into wide bandgap semiconductor physics, and enabled record high speed transistors crucial for future, energy-efficient electronics. During the course of his PhD, Reet has co-authored 20+ journal papers, 20+ conference presentations, 6 invited talks and 4 patents; including high impact works in Science and IEEE IEDM. He also has also co-founded a semiconductor start-up venture Soctera Inc. commercializing his research work on high-frequency signal amplifiers using aluminum nitride. More information can be found on his website www.reetchaudhuri.com.

Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.

Erscheinungsdatum	12.12.2023
Reihe/Serie	Springer Theses
Zusatzinfo	XVI, 255 p. 124 illus., 122 illus. in color.
Verlagsort	Cham
Sprache	englisch
Maße	155 x 235 mm
Gewicht	421 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Aluminum Nitride • Aluminum nitride heterostructure • Aluminum nitride optoelectronics • Aluminum nitride waveguides • High-frequency communication materials • Integrated RF electronics • RF active devices • Ultra-wide bandgap electronics • Ultra-wide bandgap semiconductor
ISBN-10	3-031-17201-9 / 3031172019
ISBN-13	978-3-031-17201-4 / 9783031172014
Zustand	Neuware