Heteroepitaxy of Semiconductors
Theory, Growth, and Characterization, Second Edition
Seiten
2020
|
2nd edition
CRC Press (Verlag)
978-0-367-65580-8 (ISBN)
CRC Press (Verlag)
978-0-367-65580-8 (ISBN)
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This book serves as a comprehensive reference and graduate-level text on Semiconductor Heteroepitaxy —the crystal growth of semiconductor layers on dissimilar substrates for the purpose of making modern semiconductor devices including high-speed transistors, lasers and detectors, digital circuits, photovoltaic cells, solid-state lighting, and se
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.
Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.
| Erscheinungsdatum | 01.10.2020 |
|---|---|
| Verlagsort | London |
| Sprache | englisch |
| Maße | 178 x 254 mm |
| Gewicht | 1220 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Optik |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Umwelttechnik / Biotechnologie | |
| ISBN-10 | 0-367-65580-2 / 0367655802 |
| ISBN-13 | 978-0-367-65580-8 / 9780367655808 |
| Zustand | Neuware |
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