Doping in III-V Semiconductors
Seiten
1993
Cambridge University Press (Verlag)
978-0-521-41919-2 (ISBN)
Cambridge University Press (Verlag)
978-0-521-41919-2 (ISBN)
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.
1. Shallow impurities; 2. Phenomenology of deep levels; 3. Semiconductor statistics; 4. Growth technologies; 5. Doping with elemental sources; 6. Gaseous doping sources; 7. Impurity characteristics; 8. Redistribution of impurities; 9. Deep centers; 10. Doping in heterostructures, quantum wells, and superlattices; 11. Delta doping; 12. Characterization technique.
| Erscheint lt. Verlag | 30.9.1993 |
|---|---|
| Reihe/Serie | Cambridge Studies in Semiconductor Physics and Microelectronic Engineering |
| Zusatzinfo | 1 Tables, unspecified; 240 Line drawings, unspecified |
| Verlagsort | Cambridge |
| Sprache | englisch |
| Maße | 157 x 234 mm |
| Gewicht | 1016 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 0-521-41919-0 / 0521419190 |
| ISBN-13 | 978-0-521-41919-2 / 9780521419192 |
| Zustand | Neuware |
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