Point and Extended Defects in Semiconductors

Buch | Softcover

287 Seiten

2013 | Softcover reprint of the original 1st ed. 1989
Springer-Verlag New York Inc.
978-1-4684-5711-7 (ISBN)

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The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

I Basic Properties of Defects and Their Interactions.- Structure and Properties of Point Defects in Semiconductors.- Conductivity of Grain Boundaries and Dislocations in Semiconductors.- Point Defects in GaAs.- Changes of Electrical Properties of Silicon Caused by Plastic Deformation.- Internal Friction due to Defects in Semiconductors.- Interactions of Impurities with Dislocations in Semiconductors.- Gettering Mechanism in Silicon.- Effects of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon.- The Extended Nature of Point-Like Defects in Silicon.- II Defect Imaging and Spectroscopy.- Structural and Chemical Characterization of Semiconductor Interfaces by High-Resolution Transmission Electron Microscopy.- Interactions between Point-Defects, Dislocations and a Grain Boundary: A HREM Study.- The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces.- High-Resolution Electron Microscopy of Twin-Free (111) CdTe Layers on Vicinal (001) GaAs Surfaces.- STM and Related Techniques.- Tunneling Spectroscopy and III-V Semiconductors.- SEM Studies of Individual Defects in Semiconductors.- Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Currents.- Recombination at Dislocations in Silicon and Gallium Arsenide.- Imaging of Extended Defects by Quenched Infra-red Beam Induced Currents (Q-IRBIC).- Contributors.- Participants.- Acronyms.

Reihe/Serie	NATO Science Series: B ; 202
Zusatzinfo	65 Illustrations, black and white; X, 287 p. 65 illus.
Verlagsort	New York, NY
Sprache	englisch
Maße	178 x 254 mm
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
ISBN-10	1-4684-5711-X / 146845711X
ISBN-13	978-1-4684-5711-7 / 9781468457117
Zustand	Neuware