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Semiconductor Surfaces and Interfaces - Winfried Mönch

Semiconductor Surfaces and Interfaces

(Autor)

Buch | Hardcover
XVI, 548 Seiten
2001 | 3rd rev. ed. 2001
Springer Berlin (Verlag)
978-3-540-67902-8 (ISBN)
CHF 519,95 inkl. MwSt
"Semiconductor Surfaces and Interfaces" behandelt die strukturellen und elektronischen Eigenschaften von Halbleiteroberflächen und Interfaces. Da es auf dem Gebiet in den letzten Jahren ganz wesentliche Erfolge gab, behandelt die vorliegende Monographie den Stand der entsprechenden Halöbleiterphysik und -technologie konkurrenzlos auf dem neuesten Stand.
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.

From the reviews of the third edition:

"The monograph covers comprehensively experimental and theoretical methods to study semiconductor surfaces and interfaces. These research topics include aspects of physics, chemistry as well as of electronic devices, and are a very rapidly developing scientific area. The book includes more than 1500 references and is divided into nineteen chapters. The book is the third revised edition ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 994 (19), 2002)

Erscheint lt. Verlag 10.4.2001
Reihe/Serie Springer Series in Surface Sciences
Zusatzinfo XVI, 548 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 920 g
Themenwelt Naturwissenschaften Chemie Physikalische Chemie
Technik Maschinenbau
Schlagworte Grenzfläche • Halbleiter • Materials science and engineering • PAS • Physics of semiconductors • semiconductor • Semiconductor Devices • Solid state physics • Surfaces and Interfaces
ISBN-10 3-540-67902-2 / 3540679022
ISBN-13 978-3-540-67902-8 / 9783540679028
Zustand Neuware
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