Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices
Institute of Physics Publishing (Verlag)
978-0-7503-0299-9 (ISBN)
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Jonas F. A. Nijs
Preface. Introduction. Part one: Sincle crystalline silicon and its alloys. Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal budget chemical vapour deposition techniques for Si and SiGe (M R Caymax and W Y Leong). Materials properties of (strained) SiGe layers (J Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect transistors, infrared detectors, and resonant tunneling devices in silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties, analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn). Application and Technology of polysilicon thin film transistors for liquid crystal displays. (C Baert) The use of polycrystalline silicon and its alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword index.
| Erscheint lt. Verlag | 1.1.1994 |
|---|---|
| Verlagsort | London |
| Sprache | englisch |
| Maße | 156 x 234 mm |
| Gewicht | 929 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Maschinenbau | |
| ISBN-10 | 0-7503-0299-2 / 0750302992 |
| ISBN-13 | 978-0-7503-0299-9 / 9780750302999 |
| Zustand | Neuware |
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