Dilute Nitride Semiconductors (eBook)

Mohamed Henini (Autor)

eBook Download: EPUB

2004 | 1. Auflage
640 Seiten
Elsevier Science (Verlag)
978-0-08-045599-0 (ISBN)

Infos

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas

* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 µm and 1.55 µm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.

In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

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- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 m and 1.55 m are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics- Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field- Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas- Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Inhalt

Cover 1
Frontmatter 2
Half Title Page 2
Copyright 3
Title Page 4
Copyright 5
Preface 6
Contents 8
1. MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys 19
1.1. INTRODUCTION 19
1.2. MBE GROWTH OF DILUTE III–V NITRIDES 21
1.3. DILUTE NITRIDE CHARACTERIZATION 34
1.4. ENERGY BAND AND CARRIER TRANSPORT PROPERTIES 84
1.5. ANNEALING AND N–In NEAREST NEIGHBOR EFFECTS 86
1.6. SUMMARY 98
ACKNOWLEDGEMENTS 99
REFERENCES 99
2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy 111
2.1. INTRODUCTION 111
2.2. EPITAXIAL GROWTH OF GaInAsN-BASED STRUCTURES 112
2.3. LONG WAVELENGTH GaAs-BASED LASER PERFORMANCES 123
2.4. CONCLUSION 131
ACKNOWLEDGEMENTS 132
REFERENCES 132
3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors 137
3.1. INTRODUCTION TO DILUTE NITRIDE SEMICONDUCTORS 137
3.2. THE CHEMICAL BEAM EPITAXIAL/METALORGANIC MOLECULAR BEAM EPITAXIAL (CBE/MOMBE) GROWTH PROCESS 138
3.3. CBE OF DILUTE NITRIDE SEMICONDUCTORS 139
3.4. FUNDAMENTAL STUDIES OF GaNxAs(1-x) BAND STRUCTURE 140
3.5. THE COMPOSITIONS AND PROPERTIES OF DILUTE NITRIDES GROWN BY CBE 141
3.6. CBE-GROWN DILUTE NITRIDE DEVICES 145
3.7. THE POTENTIAL FOR PRODUCTION CBE OF DILUTE NITRIDES 150
3.8. CONCLUSIONS 151
ACKNOWLEDGEMENTS 151
REFERENCES 151
4. MOMBE Growth and Characterization of III–V-N Compounds and Application to InAs Quantum Dots 155
ABSTRACT 155
4.1. INTRODUCTION 155
4.2. MOMBE GROWTH AND CHARACTERIZATION OF GaAsN 156
4.3. RELATION OF In AND N INCORPORATIONS IN THE GROWTH OF GaInNAs 163
4.4. GROWTH AND CHARACTERIZATION OF GaAsNSe NEW ALLOY 166
4.5. APPLICATION OF GaAsN TO InAs QUANTUM DOTS 167
4.6. SUMMARY 172
ACKNOWLEDGEMENTS 172
REFERENCES 172
5. Recent Progress in Dilute Nitride Quantum Dots 175
5.1. SELF-ORGANIZED QUANTUM DOTS 175
5.2. DILUTE NITRIDE QUANTUM DOTS 177
5.3. RECENT EXPERIMENTAL PROGRESS IN GaInNAs QDs 179
5.4. OTHER KINDS OF DILUTE NITRIDE QDs 191
5.5. SUMMARY AND FUTURE CHALLENGES IN DILUTE NITRIDE QDs 191
ACKNOWLEDGEMENTS 192
REFERENCES 192
6. Physics of Isoelectronic Dopants in GaAs 197
6.1. NITROGEN ISOELECTRONIC IMPURITIES 198
6.2. THE FAILURE OF THE VIRTUAL CRYSTAL APPROXIMATION 200
6.3. PREVALENT THEORETICAL MODELS ON DILUTE NITRIDES 204
6.4. ELECTROREFLECTANCE STUDY OF GaAsN 206
6.5. RESONANT RAMAN SCATTERING STUDY OF CONDUCTION BAND STATES 225
6.6. COMPATIBILITY WITH OTHER EXPERIMENTAL RESULTS 229
6.7. A COMPLEMENTARY ALLOY: GaAsBi 230
6.8. SUMMARY 233
6.9. CONCLUSION 235
REFERENCES 236
7. Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1–xAs1–yNy Alloys 241
ABSTRACT 241
7.1. INTRODUCTION 241
7.2. EXPERIMENTAL 243
7.3. SINGLE CARRIER LOCALIZATION IN InxGa1–xAs1–yNy 243
7.4. MEASUREMENT OF THE ELECTRON EFFECTIVE MASS AND EXCITON WAVE FUNCTION SIZE 248
7.5. CONCLUSIONS 265
ACKNOWLEDGEMENTS 266
REFERENCES 266
8. Probing the “Unusual” Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques 271
8.1. INTRODUCTION 271
8.2. RESONANT TUNNELLING DIODES BASED ON DILUTE NITRIDES 273
8.3. MAGNETO-TUNNELLING SPECTROSCOPY TO PROBE THE CONDUCTION BAND STRUCTURE OF DILUTE NITRIDES 277
8.4. ELECTRONIC PROPERTIES: FROM THE VERY DILUTE REGIME (~0.1%) TO THE DILUTE REGIME 282
8.5. CONDUCTION IN DILUTE NITRIDES AND FUTURE PROSPECTS 287
8.6. SUMMARY AND CONCLUSIONS 292
ACKNOWLEDGEMENTS 293
REFERENCES 293
9. Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures 297
9.1. PRINCIPLES OF ELECTROMODULATION IN ELECTRO- AND PHOTO-REFLECTANCE SPECTROSCOPY 298
9.2. BAND STRUCTURE OF (Ga,In)(As,Sb,N) BULK-LIKE LAYERS 303
9.3. (Ga,In)(As,Sb,N)-BASED QUANTUM WELL STRUCTURES 311
9.4. THE INFLUENCE OF POST-GROWN ANNEALING ON GaInNAs STRUCTURES 327
9.5. PHOTOREFLECTANCE INVESTIGATION OF THE EXCITON BINDING ENERGY 334
9.6. MANIFESTATION OF THE CARRIER LOCALIZATION EFFECT IN PHOTOREFLECTANCE SPECTROSCOPY 337
REFERENCES 339
10. Band Anticrossing and Related Electronic Structure in III-N-V Alloys 343
10.1. INTRODUCTION 343
10.2. BAND ANTICROSSING MODEL 345
10.3. EXPERIMENTAL EVIDENCE OF BAND SPLITTING AND ANTICROSSING CHARACTERISTICS 350
10.4. NOVEL ELECTRONIC AND TRANSPORT PROPERTIES OF III-N-V ALLOYS 361
10.5. CONCLUSIONS 371
ACKNOWLEDGEMENTS 372
REFERENCES 372
11. A Tight-binding Based Analysis of the Band Anti-Crossing Model and Its Application in Ga(In)NAs Alloys 379
ABSTRACT 379
11.1. INTRODUCTION 380
11.2. NITROGEN RESONANT STATES IN ORDERED GaNxAs1–x STRUCTURES 382
11.3. ANALYTICAL MODEL FOR QUANTUM WELL CONFINED STATE ENERGIES AND DISPERSION 386
11.4. INFLUENCE OF DISORDER ON NITROGEN RESONANT STATES, E– AND E+ IN GaNxAs1–x 392
11.5. CONDUCTION BAND STRUCTURE AND EFFECTIVE MASS IN DISORDERED GaNxAs1–x 396
11.6. ALLOY SCATTERING AND MOBILITY IN DILUTE NITRIDE ALLOYS 403
11.7. CONCLUSIONS 405
ACKNOWLEDGEMENTS 406
REFERENCES 406
12. Electronic Structure Evolution of Dilute III–V Nitride Alloys 411
12.1. INTRODUCTION 411
12.2. PHENOMENOLOGY OF DILUTE III–V NITRIDES 411
12.3. EMPIRICAL PSEUDOPOTENTIAL METHODOLOGY 413
12.4. ELECTRONIC STRUCTURE EVOLUTION OF DILUTE NITRIDES 415
12.5. SUMMARY OF ELECTRONIC STRUCTURE EVOLUTION 423
12.6. PHENOMENOLOGY OF DILUTE NITRIDE QUATERNARIES 424
12.7. FUTURE CHALLENGES OF NEW NITRIDE MATERIALS 426
12.8. CONCLUSIONS 427
ACKNOWLEDGEMENTS 427
REFERENCES 427
13. Theory of Nitrogen–Hydrogen Complexes in N-containing III–V Alloys 433
13.1. INTRODUCTION 433
13.2. THEORETICAL METHODS 436
13.3. N–H COMPLEXES IN GaAsN ALLOYS 438
13.4. INTRINSIC N AND H IMPURITIES IN GaP AND GaAs 462
13.5. N–H COMPLEXES IN InGaAsN 464
13.6. N–H COMPLEXES IN GaPN 464
13.7. CONCLUSIONS 465
REFERENCES 466
14. Dislocation-free III–V-N Alloy Layers on Si Substrates and Their Device Applications 469
ABSTRACT 469
14.1. INTRODUCTION 469
14.2. DISLOCATION GENERATION MECHANISMS IN LATTICE-MISMATCHED HETEROEPITAXY 470
14.3. LATTICE-MATCHED HETEROEPITAXY OF III–V-N ALLOYS ON III–V COMPOUND SEMICONDUCTORS 472
14.4. GROWTH OF DISLOCATION-FREE III–V-N ALLOY LAYERS ON Si SUBSTRATES 474
14.5. DEVICE APPLICATIONS 479
14.6. SUMMARY 485
ACKNOWLEDGEMENTS 486
REFERENCES 486
15. GaNAsSb Alloy and Its Potential for Device Applications 489
ABSTRACT 489
15.1. INTRODUCTION 489
15.2. MBE OF THE GaNAsSb ALLOY 490
15.3. BANDS 493
15.4. ANNEALING EFFECT 496
15.5. QUINARY ALLOY 500
15.6. LONG-WAVELENGTH GaAs-BASED LASER 503
15.7. HBT 506
15.8. CONCLUSIONS 509
ACKNOWLEDGEMENTS 510
REFERENCES 510
16. A Comparative Look at 1.3 µm InGaAsN-based VCSELs for Fiber-optical Communication Systems 513
ABSTRACT 513
16.1. INTRODUCTION: 0.85 µm VERSUS 1.3 µm VCSELs 513
16.2. APPROACHES TO ACHIEVE 1.3 µm VCSELs 515
16.3. 1.3 µm VCSELs BASED ON InGaAsN 517
16.4. OUTLOOK 520
16.5. CONCLUSION 521
ACKNOWLEDGEMENTS 521
REFERENCES 521
17. Long-wavelength Dilute Nitride–Antimonide Lasers 525
17.1. INTRODUCTION 525
17.2. EPITAXIAL GROWTH SYSTEMS: MOVPE AND MBE 529
17.3. ION DAMAGE AND ANNEALING BEHAVIOR 533
17.4. GaInNAsSb EDGE-EMITTING LASERS 535
17.5. SPONTANEOUS EMISSION STUDIES 550
17.6. GaInNAsSb VCSELs 557
17.7. HIGH POWER LASERS BASED ON GaInNAs(Sb) 565
17.8. RELATIVE INTENSITY NOISE 570
17.9. GaInNAsSb ELECTROABSORPTION MODULATORS AND SATURABLE ABSORBERS 576
17.10. LASER RELIABILITY 581
17.11. SUMMARY 586
ACKNOWLEDGEMENTS 587
REFERENCES 587
18. Application of Dilute Nitride Materials to Heterojunction Bipolar Transistors 597
ABSTRACT 597
18.1. INTRODUCTION 597
18.2. DESIGN CONSIDERATIONS FOR GaInNAs BASE HBTs 603
18.3. MATERIAL GROWTH AND DEVICE PROCESSING 609
18.4. GaInNAs HBT RESULTS 613
18.5. CIRCUIT APPLICATIONS FOR GaInNAs HBTs 622
18.6. FUTURE OUTLOOK 624
ACKNOWLEDGEMENTS 626
REFERENCES 626
Index 631

Produkt-Details

• Erscheint lt. Verlag: 15.12.2004
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Quantenphysik
• Themenwelt: Technik ► Bauwesen
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• ISBN-10: 0-08-045599-9 / 0080455999
• ISBN-13: 978-0-08-045599-0 / 9780080455990