Defects in Semiconductors 16
Trans Tech Publications Ltd (Verlag)
978-0-87849-628-0 (ISBN)
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Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
Microstructure of Hydrogen and Dopants in Hydrogenated Amorphous Silicon
Elastic Energy Loss due to the Reorientation of H around B in Silicon
Kinetics of In-H and Cd-H Complexes in Silicon
Diffusion and Drift of Hydrogen in Si and GaAs
New Traps for H0 in Boron- and Phosphorus-Doped Si
Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth
An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon
Hydrogen Effusion from Monocrystalline B-Doped Silicon
Effect of Multiple Trapping on Hydrogen Diffusion in Silicon
Long-Range Correlations and Hydrogen Diffusion in Silicon
Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance
Rigid Rotor in a Tetrahedral Field: An Application to (H,Be) and (D,Be) in Silicon
Electron Spin Resonance Study on Hydrogen Passivation of Donors in Silicon
Interaction of Deuterium with Internal Surfaces in Silicon
Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps
Measurements Relating to the Solubility of Hydrogen in Silicon at High Temperatures
Donor-Hydrogen Complexes in Silicon Studied by Mössbauer Spectroscopy
Depth Profiles for Hydrogen-Assisted Thermal Donor Formation in Silicon
Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2
Interstitial H and {H,B}, {H,C}and {H,Si} Pairs in Si and Ge
Spectroscopy on Transition-Metal Defects in Silicon
Transition-Metal Acceptor Pairs in Silicon
Theoretical Interpretation of EPR Measurements on the Iron-Shallow Acceptor Pairs in Silicon
Magneto-Optical Properties of Fe-Al Pairs in Silicon and the Discovery of a New Trigonal (Fei-Als)0 Pair
<100> and<111> Configurations of Iron-Acceptor Pairs in Silicon Related to Stable and Metastable States
Copper Related Defect Reactions in P-Type Silicon
Interaction of a Copper-Induced Defect with Shallow Acceptors and Deep Centers in Silicon
On the Motion of Iron in Silicon at Moderate Temperatures under High Electric Fields
Interaction between Copper and Irradiation-Induced Defects in Crystalline Silicon
Gettering of Copper and Iron to Extended Surface Defects in Silicon
Shallow Excited States of the 1014 meV Cu Related Optical Center in Silicon
Electronic Nature of Neutral Zinc in Silicon: FTIR-Absorption, Uniaxial Stress Measurements
Diffusion of Gold in Amorphous Silicon
Vibronic Interaction of a Gold-Related Center in Silicon
The Gold Center in Silicon
Electronic States of Fe4 and Mn4 Clusters in Silicon
Diffusivities of 3D Transition-Metal Impurities in Silicon
Uniaxial Stress Alignment of Pd- and Ni- in Silicon
Electrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in Silicon
Nickel Related Deep Levels in Germanium
Magnetic Resonance from a Metastable Sulfur-Pair-Related Complex Defect in Silicon
Piezospectroscopy of Two Beryllium Related Double Acceptors in Silicon
On the Determination of Nitrogen in Czochralski Silicon
β NMR of Nonsubstitutional 12B after Implantation into P-Type Silicon
Defect Impurity Complex Formation at High Donor Concentration in Silicon
Electronic Structure of Isolated Aluminium Point Defects and Defect Pairs in Silicon
Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon
Photoluminescence of Edge-Defined Film-FED Growth Silicon
EPR Studies of NTD-Produced as Donors in Isotopically Enriched 74Ge Single Crystals
In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
Interactions between Defects during the Annealing of Crystalline Silicon
An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon
EPR Study of Multistable Ci-Ps Silicon
Observation of a Configurationally Unstable Defect in Si
ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
Spin-Marking Method in Silicon: Interstitial and Pairing Defects
Electrically Active Oxygen in Gallium Arsenide
Oxygen Related Point Defects in GaAs
New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs
Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon
Reorientation of Stress Induced Alignment of Thermal Donors in Silicon
Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon
Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy
Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal
IR Absorption in Monoisotopic Germanium
Ab Initio Molecular Dynamics of Semiconductor Defects
Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors
Theory of Nitrogen and Platelets in Diamond
Ab Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and Germanium
Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy
Many-Electron Effects in the Negative Silicon Vacancy
Defects and Bandtails in Amorphous Silicon
Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors
Donor Bistability Induced by Electron-Phonon Coupling
The Temperature Dependence of Trap Cross Sections
Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations
Recombination-Induced Defect Heating and Related Phenomena
Electron-Hole Mechanism of Migration and Defect Interaction
Diluted Magnetic Semiconductors with Cr2+ - Unusual p-d Interaction
Stability of the Positions of an Interstitial Impurity Atom and the Electronic States in Semiconductors
Local Mode Spectroscopy and Model Study for Assessing the Role of Light Defects in III-V Compound Semiconductors
Hydrogen-Dopant Interactions in III-V Semiconductors
Interaction of Hydrogen with Impurities in Semiconductors
Carbon-Hydrogen Interaction in III-V Compounds
Quantum Motion of Muonium in GaAs and CuCl
Acceptor Passivation in GaP by Positively Charged Hydrogen Manifested by Donor-Acceptor Pair Luminescence
Local Mode Spectroscopy of OH and NH Complexes in Semi-Insulating Gallium Arsenide
Effects of Reverse Bias Annealing and Zero Bias Annealing on Ti/n-GaAs and Au/n-GaAs Schottky Barriers Containing Hydrogen
Structure and Stability of Cadmium-Defect Complexes in III-V-Compounds Formed after H2-Plasma Treatment
Shallow and Deep Radiative Levels of H-Complexes in GaAs
Dissociation Kinetics of Hydrogen-Neutralized Si Donors and DX Centers in AlGaAs
Equilibrium Sites and Relative Stability of Atomic and Molecular Hydrogen in GaAs
Unintentional Hydrogenation of III-V Semiconductors during Device Processing
Hydrogen Passivation of Shallow and Deep Centers in GaSb
Hydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical Effects
Effects of Hydrogen in Si-Doped AlAs
Energy Transfer in Rare-Earth-Doped III-V Semiconductors
Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
Theory of Substitutional Rare Earth Impurities in Semiconductors
Spectroscopic Investigation of the Er Site in GaAs:Er
Excitation Mechanism of the Erbium 4F Emissions in GaAs
Electrical Properties of Yb, Er Doped InP
Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP
Photoluminescent Properties of Yb Doped InAsP Alloys
FTIR High Resolution Optical Study of GaAs:Fe
Interstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance Studies
Electronic Structure of Transition-Metal Impurities in GaAs1-xPx Alloys
Optical and Spin Dependent Investigations of Mn2+ and V3+ in GaP
Electron Paramagnetic Resonance Identification of a Trigonal Fe-S Pair in GaP
Semi-Insulating InP:Cu
Reinvestigation of the Optical Properties of the Iron Impurity in GaAs and InP
Defect Metastability in III-V Compounds
High Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAs
Vibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAs
A Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic Pressure
Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs
Optically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs
Correlation Effects due to Ionized Defects in Semiconductors
Capture Kinetics of the Individual DX Center Levels
On the Kinetics of Photoconductivity in AlxGa1-xAs:Si
DX Levels in Si-Doped AlxGa1-xAs Containing Boron
Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped AlxGa1-xAs
Paramagnetic Resonance of Sn in AlGaAs
Limitations of Ion Channeling for the Study of Bistable Defects
Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
The Structure of DX Centers and EL2
Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP
Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR
Energy Levels Associated with the Metastable State of EL2
Re-Examination of the Configuration Coordinate Diagram of EL2
Vacancy in the Metastable State of the EL2 Defect in GaAs
First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State
Opticallly Detected Electron-Nuclear Double Resonance of the Ms=0 State of a PGa-YPSpin-Triplet Center in GaP
Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e--Irradiation
Photoluminescence Related to SiGa-SiAs Pairs in GaAs
EPR Observation of a Deep Center with A p1 Electron Configuration in GaAs
Intrinsic Defects in Electron Irradiated p-Type GaAs
High Temperature NMR Study of Intrinsic Defects in GaAs
Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects
Electrical and Optical Properties of GaAs Doped with Li
Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy
Irradiation-Induced Electronic Levels Removed in the 280K Defect-Annealing Stage of n-GaAs
Low Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage Cascades
Influence of Fluorine on Electrical Properties and Complex Formation in GaAs
Combined Study of Complex Defects in Semiconductors
Defects in InP Investigated by the Positron Annihilation Technique
Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb
Low Temperature GaAs: Electrical and Optical Properties
Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs
Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers
Effect of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by Mombe
Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum Source
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances
Defects in MCZ Silicon with Various Oxygen and Carbon Contents
Atomic Defect Configurations Identified by Nuclear Techniques
Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities
Identification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive Impurities
Microscopy of Frenkel Pairs in Semiconductors by Nuclear Techniques
Modern Muon Spectroscopic Methods in Semiconductor Physics
Muon Stopping Sites in Semiconductors from Decay-Positron Channeling
Polarized Spectroscopy of Complex Luminescence Centers
ONP Spectroscopy of Defects in Silicon
Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors
On the Analysis of Digital DLTS Data
A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects
X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon
Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance
Excited Defect Energy States from Temperature Dependent ESR
Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy
Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium
Photoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates
Paramagnetic Defects in SiC Based Materials
Acceptors in Silicon Carbide: ODMR Data
Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide
Impurity-Defect Reactions in Ion-Implanted Diamond
Native Defect Compensation in Wide-Band-Gap Semiconductors
ODMR Investigations of A - Centres in CdTe
Picosecond Energy Transfer between Excitons and Defects in II-IV Semiconductors
Luminescence of A 5d-Centre in ZnS
Interstitial Defects in II-VI Semiconductors: Role of the Cation d States
PAC Study of the Acceptor Li in II-VI Semiconductors
Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors
Strain Relief in Thin Films: Can we Control it?
Composition Modulation Effects on the Generation of Defects in In0.54Ga0.46As Strained Layers
Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide
Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility
Dopant Diffusion in Si0.7Ge0.3
Characterisation of Dislocations in the Presence of Transition Metal Contamination
Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon
Photoluminescence and Electronic Structure of Dislocations in Si Crystals
Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
Theoretical Study on the Structure and Properties of Dislocations in Semiconductors
Solid State Processes at the Atomic Level
Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices
Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells
Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
Spectroscopy of Shallow Donor Impurities in GaAs/GaAlAs Multi-Quantum Wells
Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level
Scanning Tunneling Microscopy Studies of Semiconductor Surface Defects
The Atomic and Electronic Structure of Ordered Buried B(2x1) Layers in Si(100)
Negative U Systems at Semiconductor Surfaces
Ab Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface - A Proposal for New Surface Treatment
Two-Dimensionally Localized Vibrational Mode due to Al Atoms Substituting for Ga One-Monolayer in GaAs
0 Surrounding of Pb Defects at the (111)Si/SiO2 Interface
17O Hyperfine Study of the Pb Center
Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface
Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors
Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon
Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon
Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon
Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
Annealing of Damage in GaAs and InP after Implantation of Cd and In
Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films
Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
The Properties of Individual Si/SiO2 Defects and Their Link to 1/F Noise
Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells
A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance
Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes
Recombination-Enhanced Diffusion of Be in GaAs
Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors
Effects of the Substrate-Epitaxial Layer Interface on the DLTS Spectra in MESFET and HFET Devices
The Study of Interfacial Traps of InP Metal-Insulator-Semiconductor Stuctures
| Reihe/Serie | Materials Science Forum ; Volumes 83-87 |
|---|---|
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 3760 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Technik ► Maschinenbau | |
| ISBN-10 | 0-87849-628-9 / 0878496289 |
| ISBN-13 | 978-0-87849-628-0 / 9780878496280 |
| Zustand | Neuware |
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